Preparation and characterization of LaxC60 thin films fabricated by layer-by-layer deposition

Toshifumi Terui, Yusei Maruyama, Takeshi Arai, Shinro Mashiko

Research output: Contribution to journalArticle

Abstract

A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.

Original languageEnglish
Pages (from-to)199-212
Number of pages14
JournalFullerene Science and Technology
Volume6
Issue number2
DOIs
Publication statusPublished - Jan 1 1998

Fingerprint

Thin films
preparation
thin films
Evaporation
Activation energy
Physical properties
physical properties
Metals
Doping (additives)
insulators
evaporation
Semiconductor materials
activation energy
solid state
temperature dependence
electrical resistivity
metals
Temperature
Electric Conductivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

Preparation and characterization of LaxC60 thin films fabricated by layer-by-layer deposition. / Terui, Toshifumi; Maruyama, Yusei; Arai, Takeshi; Mashiko, Shinro.

In: Fullerene Science and Technology, Vol. 6, No. 2, 01.01.1998, p. 199-212.

Research output: Contribution to journalArticle

Terui, Toshifumi ; Maruyama, Yusei ; Arai, Takeshi ; Mashiko, Shinro. / Preparation and characterization of LaxC60 thin films fabricated by layer-by-layer deposition. In: Fullerene Science and Technology. 1998 ; Vol. 6, No. 2. pp. 199-212.
@article{2182047eb02a44aea135541a42760c1b,
title = "Preparation and characterization of LaxC60 thin films fabricated by layer-by-layer deposition",
abstract = "A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.",
author = "Toshifumi Terui and Yusei Maruyama and Takeshi Arai and Shinro Mashiko",
year = "1998",
month = "1",
day = "1",
doi = "10.1080/10641229809350195",
language = "English",
volume = "6",
pages = "199--212",
journal = "Fullerenes Nanotubes and Carbon Nanostructures",
issn = "1536-383X",
publisher = "Taylor and Francis Ltd.",
number = "2",

}

TY - JOUR

T1 - Preparation and characterization of LaxC60 thin films fabricated by layer-by-layer deposition

AU - Terui, Toshifumi

AU - Maruyama, Yusei

AU - Arai, Takeshi

AU - Mashiko, Shinro

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.

AB - A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.

UR - http://www.scopus.com/inward/record.url?scp=0032024668&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032024668&partnerID=8YFLogxK

U2 - 10.1080/10641229809350195

DO - 10.1080/10641229809350195

M3 - Article

AN - SCOPUS:0032024668

VL - 6

SP - 199

EP - 212

JO - Fullerenes Nanotubes and Carbon Nanostructures

JF - Fullerenes Nanotubes and Carbon Nanostructures

SN - 1536-383X

IS - 2

ER -