Preparation and characterization of LaxC60 thin films fabricated by layer-by-layer deposition

Toshifumi Terui; Yusei Maruyama; Takeshi Arai; Shinro Mashiko

doi:10.1080/10641229809350195

Preparation and characterization of La_xC₆₀ thin films fabricated by layer-by-layer deposition

Toshifumi Terui, Yusei Maruyama, Takeshi Arai, Shinro Mashiko

Condensed Matter Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A modification of physical properties of solid-state C₆₀ when La was doped to C₆₀ thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C₆₀ film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.

Original language	English
Pages (from-to)	199-212
Number of pages	14
Journal	Fullerene Science and Technology
Volume	6
Issue number	2
DOIs	https://doi.org/10.1080/10641229809350195
Publication status	Published - Jan 1 1998

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)

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abstract = "A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.",

author = "Toshifumi Terui and Yusei Maruyama and Takeshi Arai and Shinro Mashiko",

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N2 - A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.

AB - A modification of physical properties of solid-state C60 when La was doped to C60 thin film as a trivalent metal was examined. The thin film was fabricated by using Layer-by-Layer deposition technique with the multi-sources evaporation system. We found that the C60 film changes its electrical character from the insulator to the semiconductor rapidly upon La doping. The temperature dependence of the electrical conductivity is semiconductive with the activation energy of about 0.3eV.

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Preparation and characterization of La_xC₆₀ thin films fabricated by layer-by-layer deposition

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