Abstract
Surface-initiated radical polymerization of vinyl acetate (VAc) from silicon wafer was carried out using degenerative chain transfer system promoted by alkyl iodides. The silicon wafer immobilized with the radical initiator was prepared by the chemical vapor adsorption of 6-triethoxysilylhexyl 2-bromoisobutyrate on hydrophilic silicon wafer. The initiator-immobilized silicon wafer, AIBN, n-butyl iodide (BuI), I2, and VAc were introduced into a glass tube, and then degassed by repeating the freeze-and-thaw process. The polymerization was carried out at 343 K for 18 hrs under argon atmosphere to give a polymer brush on substrate and a free polymer from BuI at the same time. The thickness of polymer brush was estimated by AFM and ellipsometry. The grafting density was calculated to be ca. 0.14 chains/nm 2 by linear relationship of the thickness and the number-average molecular weights, which was determined by GPC of free polymer.
| Original language | English |
|---|---|
| Number of pages | 1 |
| Publication status | Published - Oct 18 2006 |
| Event | 55th SPSJ Annual Meeting - Nagoya, Japan Duration: May 24 2006 → May 26 2006 |
Other
| Other | 55th SPSJ Annual Meeting |
|---|---|
| Country | Japan |
| City | Nagoya |
| Period | 5/24/06 → 5/26/06 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Preparation and surface characterization of poly(vinyl acetate) brush. / Terayama, Yuki; Kobayashi, Motoyasu; Takahara, Atsushi.
2006. Paper presented at 55th SPSJ Annual Meeting, Nagoya, Japan.Research output: Contribution to conference › Paper
}
TY - CONF
T1 - Preparation and surface characterization of poly(vinyl acetate) brush
AU - Terayama, Yuki
AU - Kobayashi, Motoyasu
AU - Takahara, Atsushi
PY - 2006/10/18
Y1 - 2006/10/18
N2 - Surface-initiated radical polymerization of vinyl acetate (VAc) from silicon wafer was carried out using degenerative chain transfer system promoted by alkyl iodides. The silicon wafer immobilized with the radical initiator was prepared by the chemical vapor adsorption of 6-triethoxysilylhexyl 2-bromoisobutyrate on hydrophilic silicon wafer. The initiator-immobilized silicon wafer, AIBN, n-butyl iodide (BuI), I2, and VAc were introduced into a glass tube, and then degassed by repeating the freeze-and-thaw process. The polymerization was carried out at 343 K for 18 hrs under argon atmosphere to give a polymer brush on substrate and a free polymer from BuI at the same time. The thickness of polymer brush was estimated by AFM and ellipsometry. The grafting density was calculated to be ca. 0.14 chains/nm 2 by linear relationship of the thickness and the number-average molecular weights, which was determined by GPC of free polymer.
AB - Surface-initiated radical polymerization of vinyl acetate (VAc) from silicon wafer was carried out using degenerative chain transfer system promoted by alkyl iodides. The silicon wafer immobilized with the radical initiator was prepared by the chemical vapor adsorption of 6-triethoxysilylhexyl 2-bromoisobutyrate on hydrophilic silicon wafer. The initiator-immobilized silicon wafer, AIBN, n-butyl iodide (BuI), I2, and VAc were introduced into a glass tube, and then degassed by repeating the freeze-and-thaw process. The polymerization was carried out at 343 K for 18 hrs under argon atmosphere to give a polymer brush on substrate and a free polymer from BuI at the same time. The thickness of polymer brush was estimated by AFM and ellipsometry. The grafting density was calculated to be ca. 0.14 chains/nm 2 by linear relationship of the thickness and the number-average molecular weights, which was determined by GPC of free polymer.
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