Abstract
Benzo[1,2-d:4,5-d′]bisthiazole (BBT) derivatives were newly synthesized, and the crystal structure, optical and electrochemical properties were investigated. They were applied for organic field-effect transistors (OFET) as n-channel semiconductors. Although their thin films have relatively rough surface, the devices showed high-performance OFET characteristics. The thin film of 2 exhibited the electron mobility of 0.24 cm2V-1S -1.
| Original language | English |
|---|---|
| Pages (from-to) | 766-767 |
| Number of pages | 2 |
| Journal | Chemistry Letters |
| Volume | 37 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 5 2008 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
Cite this
Preparation, characterization, and field-effect transistor performance of benzo[1,2-d : 4,5-d′]bisthiazole derivatives. / Mamada, Masashi; Nishida, Jun ichi; Tokito, Shizuo; Yamashita, Yoshiro.
In: Chemistry Letters, Vol. 37, No. 7, 05.07.2008, p. 766-767.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Preparation, characterization, and field-effect transistor performance of benzo[1,2-d
T2 - 4,5-d′]bisthiazole derivatives
AU - Mamada, Masashi
AU - Nishida, Jun ichi
AU - Tokito, Shizuo
AU - Yamashita, Yoshiro
PY - 2008/7/5
Y1 - 2008/7/5
N2 - Benzo[1,2-d:4,5-d′]bisthiazole (BBT) derivatives were newly synthesized, and the crystal structure, optical and electrochemical properties were investigated. They were applied for organic field-effect transistors (OFET) as n-channel semiconductors. Although their thin films have relatively rough surface, the devices showed high-performance OFET characteristics. The thin film of 2 exhibited the electron mobility of 0.24 cm2V-1S -1.
AB - Benzo[1,2-d:4,5-d′]bisthiazole (BBT) derivatives were newly synthesized, and the crystal structure, optical and electrochemical properties were investigated. They were applied for organic field-effect transistors (OFET) as n-channel semiconductors. Although their thin films have relatively rough surface, the devices showed high-performance OFET characteristics. The thin film of 2 exhibited the electron mobility of 0.24 cm2V-1S -1.
UR - http://www.scopus.com/inward/record.url?scp=49149098671&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=49149098671&partnerID=8YFLogxK
U2 - 10.1246/cl.2008.766
DO - 10.1246/cl.2008.766
M3 - Article
AN - SCOPUS:49149098671
VL - 37
SP - 766
EP - 767
JO - Chemistry Letters
JF - Chemistry Letters
SN - 0366-7022
IS - 7
ER -