Preparation, characterization, and field-effect transistor performance of benzo[1,2-d: 4,5-d′]bisthiazole derivatives

Masashi Mamada; Jun ichi Nishida; Shizuo Tokito; Yoshiro Yamashita

doi:10.1246/cl.2008.766

Preparation, characterization, and field-effect transistor performance of benzo[1,2-d: 4,5-d′]bisthiazole derivatives

Masashi Mamada, Jun ichi Nishida, Shizuo Tokito, Yoshiro Yamashita

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Benzo[1,2-d:4,5-d′]bisthiazole (BBT) derivatives were newly synthesized, and the crystal structure, optical and electrochemical properties were investigated. They were applied for organic field-effect transistors (OFET) as n-channel semiconductors. Although their thin films have relatively rough surface, the devices showed high-performance OFET characteristics. The thin film of 2 exhibited the electron mobility of 0.24 cm²V^-1S ^-1.

Original language	English
Pages (from-to)	766-767
Number of pages	2
Journal	Chemistry Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1246/cl.2008.766
Publication status	Published - Jul 5 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)

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10.1246/cl.2008.766

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abstract = "Benzo[1,2-d:4,5-d′]bisthiazole (BBT) derivatives were newly synthesized, and the crystal structure, optical and electrochemical properties were investigated. They were applied for organic field-effect transistors (OFET) as n-channel semiconductors. Although their thin films have relatively rough surface, the devices showed high-performance OFET characteristics. The thin film of 2 exhibited the electron mobility of 0.24 cm2V-1S -1.",

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AU - Tokito, Shizuo

AU - Yamashita, Yoshiro

PY - 2008/7/5

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AB - Benzo[1,2-d:4,5-d′]bisthiazole (BBT) derivatives were newly synthesized, and the crystal structure, optical and electrochemical properties were investigated. They were applied for organic field-effect transistors (OFET) as n-channel semiconductors. Although their thin films have relatively rough surface, the devices showed high-performance OFET characteristics. The thin film of 2 exhibited the electron mobility of 0.24 cm2V-1S -1.

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Preparation, characterization, and field-effect transistor performance of benzo[1,2-d: 4,5-d′]bisthiazole derivatives

Abstract

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