Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties

Katsuyuki Ishikawa; Takayuki Watanabe; Hiroshi Funakubo

doi:10.1016/S0040-6090(01)01005-7

Preparation of Bi₂WO₆ thin films by metalorganic chemical vapor deposition and their electrical properties

Katsuyuki Ishikawa, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Bi₂WO₆ films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO₃, (100)SrTiO₃ and (100)CaRuO₃//(100)SrTiO₃ substrates at 500°C. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO₃//(100)SrTiO₃ substrate when the deposition temperature decreased to 400°C. Ferroelectricity was observed only for the film deposited on the (100)CaRuO₃//(100)SrTiO₃ substrate at 600°C. The doubled remanent polarization and the coercive field of the film were 0.17 μC/cm² and 7.0 kV/cm, respectively.

Original language	English
Pages (from-to)	128-133
Number of pages	6
Journal	Thin Solid Films
Volume	392
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(01)01005-7
Publication status	Published - Jul 23 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(01)01005-7

Cite this

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abstract = "Bi2WO6 films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO3, (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates at 500°C. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO3//(100)SrTiO3 substrate when the deposition temperature decreased to 400°C. Ferroelectricity was observed only for the film deposited on the (100)CaRuO3//(100)SrTiO3 substrate at 600°C. The doubled remanent polarization and the coercive field of the film were 0.17 μC/cm2 and 7.0 kV/cm, respectively.",

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AU - Ishikawa, Katsuyuki

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

PY - 2001/7/23

Y1 - 2001/7/23

N2 - Bi2WO6 films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO3, (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates at 500°C. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO3//(100)SrTiO3 substrate when the deposition temperature decreased to 400°C. Ferroelectricity was observed only for the film deposited on the (100)CaRuO3//(100)SrTiO3 substrate at 600°C. The doubled remanent polarization and the coercive field of the film were 0.17 μC/cm2 and 7.0 kV/cm, respectively.

AB - Bi2WO6 films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO3, (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates at 500°C. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO3//(100)SrTiO3 substrate when the deposition temperature decreased to 400°C. Ferroelectricity was observed only for the film deposited on the (100)CaRuO3//(100)SrTiO3 substrate at 600°C. The doubled remanent polarization and the coercive field of the film were 0.17 μC/cm2 and 7.0 kV/cm, respectively.

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Preparation of Bi₂WO₆ thin films by metalorganic chemical vapor deposition and their electrical properties

Abstract

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