Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties

Katsuyuki Ishikawa, Takayuki Watanabe, Hiroshi Funakubo

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26 Citations (Scopus)


Bi2WO6 films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO3, (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates at 500°C. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO3//(100)SrTiO3 substrate when the deposition temperature decreased to 400°C. Ferroelectricity was observed only for the film deposited on the (100)CaRuO3//(100)SrTiO3 substrate at 600°C. The doubled remanent polarization and the coercive field of the film were 0.17 μC/cm2 and 7.0 kV/cm, respectively.

Original languageEnglish
Pages (from-to)128-133
Number of pages6
JournalThin Solid Films
Issue number1
Publication statusPublished - Jul 23 2001
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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