Preparation of conductive organic-inorganic cubic perovskite thin films by dual-source vacuum vapor deposition

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We successfully obtained conductive organic-inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of 8.7 × 10-4 Ω cm. Furthermore, the cubic perovskite thin films could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source-drain electrodes was fabricated. The FET with the cubic perovskite top-contact source-drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm2/(V·s), 1.2 × 103, and -7.2V, respectively.

Original languageEnglish
Pages (from-to)523-525
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number1 B
DOIs
Publication statusPublished - Jan 20 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Preparation of conductive organic-inorganic cubic perovskite thin films by dual-source vacuum vapor deposition'. Together they form a unique fingerprint.

Cite this