We successfully obtained conductive organic-inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of 8.7 × 10-4 Ω cm. Furthermore, the cubic perovskite thin films could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source-drain electrodes was fabricated. The FET with the cubic perovskite top-contact source-drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm2/(V·s), 1.2 × 103, and -7.2V, respectively.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||1 B|
|Publication status||Published - Jan 20 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)