Preparation of Cr-doped TiO2 thin film of p-type conduction for gas sensor application

A. Ruiz, A. Cornet, G. Sakai, Kengo Shimanoe, J. R. Morante, N. Yamazoe

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Abstract

Titanium dioxide (TiO2) could be doped with as much as 8.7 atom% Cr by means of a sol-gel method. XRD analysis revealed that the powder of Cr (8.7 atom%)-doped TiO2 calcined at 500°C consisted of small crystallites ascribale to anatase structure. The thin film of doped TiO2 (70μm) at this composition was found to behave as a p-type semiconductor on exposure to CO and NO2 in air: it responded to dilute NO2 with a sharp decrease in electrical resistance.

Original languageEnglish
Pages (from-to)892-893
Number of pages2
JournalChemistry Letters
Issue number9
DOIs
Publication statusPublished - Sep 5 2002

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)

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