Preparation of doped LaGaO3 films by pulsed laser deposition

S. Kanazawa, T. Ito, K. Yamada, T. Ohkubo, Y. Nomoto, Tatsumi Ishihara, Y. Takita

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Doped LaGaO3 oxide is considered to be a promising candidate for an electrolyte in intermediate temperature operating solid oxide fuel cell. Doped LaGaO3 films, with the composition La1-xSrxGa1-yMgy O3-(x+y)/2 was prepared by the pulsed laser deposition technique. The dynamics of the plasma plume during the film deposition was investigated. The estimated velocity of the plume head was in the range of (0.5-1.5) × 104 m/s depending on ambient pressures. The films deposited on the NiO substrate consisted of many particles and crystalline structure of LaGaO3 was obtained for post annealed films at 1000 °C for 6 h. A slight difference in stoichiometry between the target and the film was found by secondary ion mass spectroscopy.

Original languageEnglish
Pages (from-to)508-511
Number of pages4
JournalSurface and Coatings Technology
Volume169-170
DOIs
Publication statusPublished - Jun 2 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Preparation of doped LaGaO3 films by pulsed laser deposition'. Together they form a unique fingerprint.

Cite this