Preparation of la1.61GeO5.5 based oxide ion conducting film by pulsed laser deposition method and its application for SOFC

Tatsumi Ishihara, Jingwang Yan

Research output: Contribution to journalConference article

Abstract

La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La 1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO 5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO 5-δ thin film with a thickness of 3 urn can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La 1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm 2 at 873 K.

Original languageEnglish
Article numberK7.7
Pages (from-to)165-174
Number of pages10
JournalMaterials Research Society Symposium Proceedings
Volume835
Publication statusPublished - Jun 20 2005
EventSolid State Ionics - 2004 - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

Fingerprint

Conductive films
Pulsed laser deposition
Solid oxide fuel cells (SOFC)
Oxides
laser
oxide
Ions
Thin films
ion
Substrates
Electromotive force
substrate
Amorphous films
Electrolytes
Power generation
Anodes
Oxygen
Crystalline materials
method
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Preparation of la1.61GeO5.5 based oxide ion conducting film by pulsed laser deposition method and its application for SOFC. / Ishihara, Tatsumi; Yan, Jingwang.

In: Materials Research Society Symposium Proceedings, Vol. 835, K7.7, 20.06.2005, p. 165-174.

Research output: Contribution to journalConference article

@article{8af2cb7ecde54f769be83ab26592008c,
title = "Preparation of la1.61GeO5.5 based oxide ion conducting film by pulsed laser deposition method and its application for SOFC",
abstract = "La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La 1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO 5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO 5-δ thin film with a thickness of 3 urn can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La 1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm 2 at 873 K.",
author = "Tatsumi Ishihara and Jingwang Yan",
year = "2005",
month = "6",
day = "20",
language = "English",
volume = "835",
pages = "165--174",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Preparation of la1.61GeO5.5 based oxide ion conducting film by pulsed laser deposition method and its application for SOFC

AU - Ishihara, Tatsumi

AU - Yan, Jingwang

PY - 2005/6/20

Y1 - 2005/6/20

N2 - La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La 1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO 5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO 5-δ thin film with a thickness of 3 urn can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La 1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm 2 at 873 K.

AB - La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La 1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO 5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO 5-δ thin film with a thickness of 3 urn can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La 1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm 2 at 873 K.

UR - http://www.scopus.com/inward/record.url?scp=20344400127&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344400127&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:20344400127

VL - 835

SP - 165

EP - 174

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

M1 - K7.7

ER -