Preparation of la1.61GeO5.5 based oxide ion conducting film by pulsed laser deposition method and its application for SOFC

Tatsumi Ishihara, Jingwang Yan

Research output: Contribution to journalConference article

Abstract

La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La 1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO 5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO 5-δ thin film with a thickness of 3 urn can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La 1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm 2 at 873 K.

Original languageEnglish
Article numberK7.7
Pages (from-to)165-174
Number of pages10
JournalMaterials Research Society Symposium Proceedings
Volume835
Publication statusPublished - Jun 20 2005
EventSolid State Ionics - 2004 - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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