Preparation of oxygen ion conducting doped lanthanum gallate thin films on amorphous and single crystal substrates by pulsed laser deposition

Fumiaki Mitsugi, Seiji Kanazawa, Toshikazu Ohkubo, Yukiharu Nomoto, Yusaku Takita, Tatsumi Ishihara

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

An La1-xSrxGa1-y-zMgyCo zO3-(x-y+z)/2 (LSGMCO) has attracted much attention because it can be useable as an electrolyte of a solid oxide fuel cell due to its high oxide ion conductivity. We prepared LSGMCO thin films on silica glass and LaAlO3 single crystal substrates by pulsed laser deposition and evaluated their properties. LSGMCO thin films deposited at 800°C were poly-crystal and the deposition pressure affected their surface morphologies. In the case of the LaAlO3 single crystal substrate, a c-axis oriented LSGMCO thin film was obtained. DC conductivity and complex impedance of LSGMCO thin films were measured in vacuum atmosphere to investigate the effect of the crystal orientation on the oxide ion conductivity. It was revealed that resistance at a grain boundary of films is more dominant compare with the grain interior.

Original languageEnglish
Pages (from-to)105-110
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume796
Publication statusPublished - Dec 1 2003
EventCritical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices - Boston, MA, United States
Duration: Dec 1 2003Dec 3 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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