Preparation of PbZrxTi1-xO3 thin films by KrF excimer laser ablation technique

Hiromitsu Kurogi; Yukihiko Yamagata; Tomoaki Ikegami; Kenji Ebihara; Yin Tong Bok

doi:10.1557/proc-433-237

Preparation of PbZr_xTi_1-xO₃ thin films by KrF excimer laser ablation technique

Hiromitsu Kurogi, Yukihiko Yamagata, Tomoaki Ikegami, Kenji Ebihara, Yin Tong Bok

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A pulsed KrF excimer laser was used to ablate PZT thin films. The composition, crystallization, and ferroelectric properties of the PZT thin films prepared under various conditions were investigated. X ray diffraction (XRD) patterns showed that the PZT thin films prepared on MgO(100) substrates had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provides high quality perovskite films. It was also found that the stoichiometric condition of the deposited films was obtained in ambient oxygen of 100 to approximately 400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were also studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve are discussed.

Original language	English
Pages (from-to)	237-242
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	433
DOIs	https://doi.org/10.1557/proc-433-237
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 7 1996 → Apr 12 1996

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Preparation of PbZrxTi1-xO3 thin films by KrF excimer laser ablation technique",

abstract = "A pulsed KrF excimer laser was used to ablate PZT thin films. The composition, crystallization, and ferroelectric properties of the PZT thin films prepared under various conditions were investigated. X ray diffraction (XRD) patterns showed that the PZT thin films prepared on MgO(100) substrates had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provides high quality perovskite films. It was also found that the stoichiometric condition of the deposited films was obtained in ambient oxygen of 100 to approximately 400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were also studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve are discussed.",

author = "Hiromitsu Kurogi and Yukihiko Yamagata and Tomoaki Ikegami and Kenji Ebihara and Bok, {Yin Tong}",

year = "1996",

doi = "10.1557/proc-433-237",

language = "English",

volume = "433",

pages = "237--242",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 07-04-1996 Through 12-04-1996",

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TY - JOUR

T1 - Preparation of PbZrxTi1-xO3 thin films by KrF excimer laser ablation technique

AU - Kurogi, Hiromitsu

AU - Yamagata, Yukihiko

AU - Ikegami, Tomoaki

AU - Ebihara, Kenji

AU - Bok, Yin Tong

PY - 1996

Y1 - 1996

N2 - A pulsed KrF excimer laser was used to ablate PZT thin films. The composition, crystallization, and ferroelectric properties of the PZT thin films prepared under various conditions were investigated. X ray diffraction (XRD) patterns showed that the PZT thin films prepared on MgO(100) substrates had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provides high quality perovskite films. It was also found that the stoichiometric condition of the deposited films was obtained in ambient oxygen of 100 to approximately 400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were also studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve are discussed.

AB - A pulsed KrF excimer laser was used to ablate PZT thin films. The composition, crystallization, and ferroelectric properties of the PZT thin films prepared under various conditions were investigated. X ray diffraction (XRD) patterns showed that the PZT thin films prepared on MgO(100) substrates had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provides high quality perovskite films. It was also found that the stoichiometric condition of the deposited films was obtained in ambient oxygen of 100 to approximately 400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were also studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve are discussed.

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DO - 10.1557/proc-433-237

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VL - 433

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EP - 242

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 7 April 1996 through 12 April 1996

ER -

Preparation of PbZr_xTi_1-xO₃ thin films by KrF excimer laser ablation technique

Abstract

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