TY - JOUR
T1 - Preparation of resistance random access memory samples for in situ transmission electron microscopy experiments
AU - Kudo, Masaki
AU - Arita, Masashi
AU - Ohno, Yuuki
AU - Fujii, Takashi
AU - Hamada, Kouichi
AU - Takahashi, Yasuo
N1 - Funding Information:
A part of this work was financially aided by MEXT and JSPS in Japan (nos. 21560681 , 22240022 , and 24360128 ). This research was also partially supported by a grant for the Global COE Program, “Center for Next-Generation Information Technology based on Knowledge Discovery and Knowledge Federation” from MEXT.
PY - 2013
Y1 - 2013
N2 - The ion-shadow method, an ion milling process using carbon particles as the mask material, is investigated as a means of preparing resistance random access memory (ReRAM) samples for in situ transmission electron microscopy (TEM). With a milling time of 1 hour (Ar+, 5 kV, 1 mA), multiple long needles (> 5 μm), on which there are miniaturized ReRAM devices comprising a ReRAM insulating layer sandwiched by two metallic electrodes, are formed on the substrate. Device sizes of up to several hundreds of nm are easily obtained with the method. The internal part of small devices (i.e., up to 100 nm) can be observed by TEM. Electrical measurements using an in situ TEM holder demonstrate that sufficient electric contact is obtained without any electric shortage between the electrodes due to re-deposition of milled material. The ion-shadow method is confirmed to be a quick and easy method suitable for in situ TEM experiments, especially for ReRAM devices which are highly susceptible to destruction during the switching operation.
AB - The ion-shadow method, an ion milling process using carbon particles as the mask material, is investigated as a means of preparing resistance random access memory (ReRAM) samples for in situ transmission electron microscopy (TEM). With a milling time of 1 hour (Ar+, 5 kV, 1 mA), multiple long needles (> 5 μm), on which there are miniaturized ReRAM devices comprising a ReRAM insulating layer sandwiched by two metallic electrodes, are formed on the substrate. Device sizes of up to several hundreds of nm are easily obtained with the method. The internal part of small devices (i.e., up to 100 nm) can be observed by TEM. Electrical measurements using an in situ TEM holder demonstrate that sufficient electric contact is obtained without any electric shortage between the electrodes due to re-deposition of milled material. The ion-shadow method is confirmed to be a quick and easy method suitable for in situ TEM experiments, especially for ReRAM devices which are highly susceptible to destruction during the switching operation.
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U2 - 10.1016/j.tsf.2012.10.102
DO - 10.1016/j.tsf.2012.10.102
M3 - Article
AN - SCOPUS:84879879101
SN - 0040-6090
VL - 533
SP - 48
EP - 53
JO - Thin Solid Films
JF - Thin Solid Films
ER -