Preparation of silicon carbide nano-particles using a pulsed laser deposition method

H. Kawasaki; Y. Suda; T. Ohshima; T. Ueda; S. Nakashima

doi:10.1557/proc-818-m11.1.1

Preparation of silicon carbide nano-particles using a pulsed laser deposition method

H. Kawasaki, Y. Suda, T. Ohshima, T. Ueda, S. Nakashima

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

Original language	English
Pages (from-to)	241-246
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	818
DOIs	https://doi.org/10.1557/proc-818-m11.1.1
Publication status	Published - 2004
Externally published	Yes
Event	Nanoparticles and Nanowire Building Blocks - Synthesis, Processing, Characterization and Theory - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-818-m11.1.1

Cite this

@article{9eaa8fe2479a4440969da6334a2bd9ce,

title = "Preparation of silicon carbide nano-particles using a pulsed laser deposition method",

abstract = "We have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.",

author = "H. Kawasaki and Y. Suda and T. Ohshima and T. Ueda and S. Nakashima",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Nanoparticles and Nanowire Building Blocks - Synthesis, Processing, Characterization and Theory ; Conference date: 13-04-2004 Through 16-04-2004",

year = "2004",

doi = "10.1557/proc-818-m11.1.1",

language = "English",

volume = "818",

pages = "241--246",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Preparation of silicon carbide nano-particles using a pulsed laser deposition method

AU - Kawasaki, H.

AU - Suda, Y.

AU - Ohshima, T.

AU - Ueda, T.

AU - Nakashima, S.

PY - 2004

Y1 - 2004

N2 - We have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

AB - We have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

UR - http://www.scopus.com/inward/record.url?scp=12744259314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12744259314&partnerID=8YFLogxK

U2 - 10.1557/proc-818-m11.1.1

DO - 10.1557/proc-818-m11.1.1

M3 - Conference article

AN - SCOPUS:12744259314

SN - 0272-9172

VL - 818

SP - 241

EP - 246

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Nanoparticles and Nanowire Building Blocks - Synthesis, Processing, Characterization and Theory

Y2 - 13 April 2004 through 16 April 2004

ER -

Preparation of silicon carbide nano-particles using a pulsed laser deposition method

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this