TY - JOUR
T1 - Preparation of Sn doped SiO2 thin films by magnetron sputtering deposition using metal and metal-oxide powder targets
AU - Kawasaki, Hiroharu
AU - Ohshima, Tamiko
AU - Yagyu, Yoshihito
AU - Ihara, Takeshi
AU - Shinohara, Masanori
AU - Suda, Yoshiaki
N1 - Funding Information:
This study was supported in part by a Grant-in-Aid for Scientific Research in Priority Areas (C) (No. 23340181 and No. 16K04999), Hatakeyama Culture Foundation and Kato Foundation for Promotion of Science. The authors wish to thank Prof. Shiratani of Kyusyu University, Prof. Setsuhara of Osaka Univ. and Prof. Inoue of Toyohasi University of Technology for their helpful discussions.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2019/2
Y1 - 2019/2
N2 - Tin (Sn) doped silicon dioxide (SiO2) thin films, for use in optical electronic devices, were prepared by the sputtering deposition method using two kinds of mixed powder targets. One of them was a metal mixed powder target of Sn and SiO2, and the others was a metal-oxide powder target of SnO2 and SiO2. Experimental results suggest that Sn doped SiO2 thin films can be prepared by the method using both powder targets. The properties of processing plasma, such as electron density and temperature, emission species, and the elements concentration ratio of the prepared films can be controlled by the ratio of the SnO2 and SiO2 powder target mixture using a SnO2 + SiO2 target. However, it is hard to control the processing plasma and elements concentration ratio of the prepared films using a Sn + SiO2 target.
AB - Tin (Sn) doped silicon dioxide (SiO2) thin films, for use in optical electronic devices, were prepared by the sputtering deposition method using two kinds of mixed powder targets. One of them was a metal mixed powder target of Sn and SiO2, and the others was a metal-oxide powder target of SnO2 and SiO2. Experimental results suggest that Sn doped SiO2 thin films can be prepared by the method using both powder targets. The properties of processing plasma, such as electron density and temperature, emission species, and the elements concentration ratio of the prepared films can be controlled by the ratio of the SnO2 and SiO2 powder target mixture using a SnO2 + SiO2 target. However, it is hard to control the processing plasma and elements concentration ratio of the prepared films using a Sn + SiO2 target.
UR - http://www.scopus.com/inward/record.url?scp=85062261124&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062261124&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/aaea67
DO - 10.7567/1347-4065/aaea67
M3 - Article
AN - SCOPUS:85062261124
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SA
M1 - SAAD04
ER -