Preparation of SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition from two new liquid organometallic sources

Hiroshi Funakubo, Norimasa Nukaga, Katsuyuki Ishikawa, Takayuki Watanabe

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28 Citations (Scopus)

Abstract

SrBi2Ta2O9 thin films were prepared with high compositional reproducibility by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3, Sr[Ta(O·C2H5)6]2 and O2 as source materials. When the deposition temperature was increased, the Bi/Ta and Sr/Ta ratios in the film increased and decreased, respectively. This behavior can be estimated from the deposition temperature dependence of Bi2O3 and Sr-Ta-O films deposited from Bi(CH3)3-O2 and Sr[Ta(O·C2H5)6]2-O2 systems, respectively. Bi/Ta ratio can be controlled by the input gas concentration ratio of Bi(CH3)3 to Sr[Ta(O·C2H5)6]2 at 600 °C. On the other hand, Sr/Ta ratio was independent of the input gas concentration. An almost single phase of SrBi2Ta2O9 was deposited at 670 °C. The remanent polarization and the coercive field of the film deposited at 670 °C following heat treatment at 750 °C for 30 min in O2 atmosphere were 5.0 μC/cm2 and 80 kV/cm, respectively.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number2 B
DOIs
Publication statusPublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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