Preparation of Tin Oxide (SnO2) thin Film Gas Sensor by PLD Method

Yoshiaki Suda, Hiroharu Kawasaki, Keitarou Iwatsuji, Tamiko Ohshima

Research output: Contribution to journalArticlepeer-review

Abstract

Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.

Original languageEnglish
Pages (from-to)222-227
Number of pages6
JournalIEEJ Transactions on Electronics, Information and Systems
Volume123
Issue number2
DOIs
Publication statusPublished - Jan 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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