Preparation of Tin Oxide (SnO2) thin Film Gas Sensor by PLD Method

Yoshiaki Suda; Hiroharu Kawasaki; Keitarou Iwatsuji; Tamiko Ohshima

doi:10.1541/ieejeiss.123.222

Preparation of Tin Oxide (SnO₂) thin Film Gas Sensor by PLD Method

Yoshiaki Suda, Hiroharu Kawasaki, Keitarou Iwatsuji, Tamiko Ohshima

Research output: Contribution to journal › Article › peer-review

Abstract

Tin oxide (SnO₂) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H₂ gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO₂ thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.

Original language	English
Pages (from-to)	222-227
Number of pages	6
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	123
Issue number	2
DOIs	https://doi.org/10.1541/ieejeiss.123.222
Publication status	Published - Jan 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1541/ieejeiss.123.222

Fingerprint Dive into the research topics of 'Preparation of Tin Oxide (SnO<sub>2</sub>) thin Film Gas Sensor by PLD Method'. Together they form a unique fingerprint.

Cite this

@article{fca059df2b564219a4c21158f46310e0,

title = "Preparation of Tin Oxide (SnO2) thin Film Gas Sensor by PLD Method",

abstract = "Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.",

author = "Yoshiaki Suda and Hiroharu Kawasaki and Keitarou Iwatsuji and Tamiko Ohshima",

year = "2003",

month = jan,

doi = "10.1541/ieejeiss.123.222",

language = "English",

volume = "123",

pages = "222--227",

journal = "IEEJ Transactions on Electronics, Information and Systems",

issn = "0385-4221",

publisher = "The Institute of Electrical Engineers of Japan",

number = "2",

}

TY - JOUR

T1 - Preparation of Tin Oxide (SnO2) thin Film Gas Sensor by PLD Method

AU - Suda, Yoshiaki

AU - Kawasaki, Hiroharu

AU - Iwatsuji, Keitarou

AU - Ohshima, Tamiko

PY - 2003/1

Y1 - 2003/1

N2 - Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.

AB - Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.

UR - http://www.scopus.com/inward/record.url?scp=85018133197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018133197&partnerID=8YFLogxK

U2 - 10.1541/ieejeiss.123.222

DO - 10.1541/ieejeiss.123.222

M3 - Article

AN - SCOPUS:85018133197

VL - 123

SP - 222

EP - 227

JO - IEEJ Transactions on Electronics, Information and Systems

JF - IEEJ Transactions on Electronics, Information and Systems

SN - 0385-4221

IS - 2

ER -