TY - JOUR
T1 - Preparation of Tin Oxide (SnO2) thin Film Gas Sensor by PLD Method
AU - Suda, Yoshiaki
AU - Kawasaki, Hiroharu
AU - Iwatsuji, Keitarou
AU - Ohshima, Tamiko
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2003/1
Y1 - 2003/1
N2 - Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.
AB - Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PUD) method. X-ray diffraction pattern shows that crystallinty of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.
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U2 - 10.1541/ieejeiss.123.222
DO - 10.1541/ieejeiss.123.222
M3 - Article
AN - SCOPUS:85018133197
VL - 123
SP - 222
EP - 227
JO - IEEJ Transactions on Electronics, Information and Systems
JF - IEEJ Transactions on Electronics, Information and Systems
SN - 0385-4221
IS - 2
ER -