Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation

Masashi Mukaida, Shintaro Miyazawa, Masahiro Sasaura, Ken'ichi Kuroda

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films.

Original languageEnglish
Pages (from-to)L936-L939
JournalJapanese Journal of Applied Physics
Volume29
Issue number6
DOIs
Publication statusPublished - Jan 1 1990
Externally publishedYes

Fingerprint

Laser ablation
laser ablation
Thin films
preparation
Substrates
thin films
Full width at half maximum
Epitaxial growth
Single crystals
X ray diffraction
single crystals
diffraction
x rays
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation. / Mukaida, Masashi; Miyazawa, Shintaro; Sasaura, Masahiro; Kuroda, Ken'ichi.

In: Japanese Journal of Applied Physics, Vol. 29, No. 6, 01.01.1990, p. L936-L939.

Research output: Contribution to journalArticle

Mukaida, Masashi ; Miyazawa, Shintaro ; Sasaura, Masahiro ; Kuroda, Ken'ichi. / Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation. In: Japanese Journal of Applied Physics. 1990 ; Vol. 29, No. 6. pp. L936-L939.
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