Pressure effect in sublimation growth of bulk SiC

Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The effect of growth pressure on the impurity incorporation as well as on the crystal quality was investigated in sublimation growth of a bulk SiC single crystal. The growth pressure was varied within the range of 1-100 Torr and it was found that many voids or precipitates were generated in the grown crystals and the Aluminum (Al) impurity incorporation increased during the Si-face growth when the growth pressure decreased. The pressure effect on the Al impurity incorporation with the change of step structure was discussed.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Pressure effects
Sublimation
pressure effects
sublimation
Impurities
Aluminum
impurities
aluminum
Crystals
crystals
Precipitates
voids
precipitates
Single crystals
single crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kitou, Y., Bahng, W., Nishizawa, S. I., Nishino, S., & Arai, K. (2000). Pressure effect in sublimation growth of bulk SiC. Materials Science Forum, 338.

Pressure effect in sublimation growth of bulk SiC. / Kitou, Yasuo; Bahng, Wook; Nishizawa, Shin Ichi; Nishino, Shigehiro; Arai, Kazuo.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

Kitou, Y, Bahng, W, Nishizawa, SI, Nishino, S & Arai, K 2000, 'Pressure effect in sublimation growth of bulk SiC', Materials Science Forum, vol. 338.
Kitou, Yasuo ; Bahng, Wook ; Nishizawa, Shin Ichi ; Nishino, Shigehiro ; Arai, Kazuo. / Pressure effect in sublimation growth of bulk SiC. In: Materials Science Forum. 2000 ; Vol. 338.
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