Abstract
The effect of growth pressure on the impurity incorporation as well as on the crystal quality was investigated in sublimation growth of a bulk SiC single crystal. The growth pressure was varied within the range of 1-100 Torr and it was found that many voids or precipitates were generated in the grown crystals and the Aluminum (Al) impurity incorporation increased during the Si-face growth when the growth pressure decreased. The pressure effect on the Al impurity incorporation with the change of step structure was discussed.
| Original language | English |
|---|---|
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - Jan 1 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering