Pressure Evolution of Characteristic Electronic States in EuRh2Si2 and EuNi2Ge2

Fuminori Honda, Keigo Okauchi, Ai Nakamura, Dai Aoki, Hiromu Akamine, Yousuke Ashitomi, Masato Hedo, Takao Nakama, Yoshichika O'Nuki

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

EuRh2Si2 and EuNi2Ge2 are known to reveal the valence transition at pressure of about 1 and 2 GPa, respectively, from a divalent state (Eu2+) to a nearly Eu-trivalent state (Eu3-δ′). We have succeeded in growing single crystals of EuRh2Si2 by the Bridgman method and EuNi2Ge2 by the In-flux method. In order to clarify the transition of electronic properties from Eu2+ to Eu3-δ′ in detail, we carried out electrical resistivity measurements under pressure. EuRh2Si2 indicates a remarkable first-order valence transition in the pressure range from 1 to 2 GPa with a sharp hysteresis in the electrical resistivity. At 2.12 GPa, the temperature dependence of the electrical resistivity exhibit a broad peak, implying a moderate heavy-fermion state such as EuPd2Si2 and EuIr2Si2. While, EuNi2Ge2 indicates a first-order valence transition in the pressure range from 2 to 3.22 GPa with a hysteresis in the electrical resistivity. At 3.60 GPa, the electrical resistivity of EuNi2Ge2 also shows a characteristic behavior for a moderate heavy-fermion compound. Pressure - temperature phase diagrams for both compounds are constructed.

Original languageEnglish
Article number022004
JournalJournal of Physics: Conference Series
Volume807
Issue number2
DOIs
Publication statusPublished - Apr 6 2017
Externally publishedYes
Event18th International Conference on Strongly Correlated Electron Systems, SCES 2016 - Hangzhou, China
Duration: May 9 2016May 13 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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