Pressure-induced valence change and moderate heavy fermion state in Eu-compounds

Fuminori Honda, Keigo Okauchi, Yoshiki Sato, Ai Nakamura, Hiromu Akamine, Yosuke Ashitomi, Masato Hedo, Takao Nakama, Tetsuya Takeuchi, Jaroslav Valenta, Jiri Prchal, Vladimir Sechovský, Dai Aoki, Yoshichika Ōnuki

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A pressure-induced valence transition has attracted much attention in Eu-compounds. Among them, EuRh2Si2, EuNi2Ge2, and EuCo2Ge2 reveal the valence transition around 1, 2, and 3 GPa, respectively. We have succeeded in growing single crystals of EuT2X2 (T: transition metal, X: Si, Ge) and studied electronic properties under pressure. EuRh2Si2 indicates a first-order valence transition between 1 and 2 GPa, with a large and prominent hysteresis in the electrical resistivity. At higher pressures, the first-order valence transition changes to a cross-over regime with an intermediate valence state. Tuning of the valence state with pressure is reflected in a drastic change of the temperature dependence of the electrical resistivity in EuRh2Si2 single crystals. Effect of pressure on the valence states on EuRh2Si2, EuIr2Si2, EuNi2Ge2, and EuCo2Ge2, as well as an isostructural related compound EuGa4, are reviewed.

Original languageEnglish
Pages (from-to)182-191
Number of pages10
JournalPhysica B: Condensed Matter
Volume536
DOIs
Publication statusPublished - May 1 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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