Probing local electronic transport at the organic single-crystal/dielectric interface

Yi Luo, Frederic Gustavo, Jean Yves Henry, Fabrice Mathevet, Francois Lefloch, Marc Sanquer, Patrice Rannou, Benjamin Grévin

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Probing of the local electric potential at the organic/dielectric interface in sub-μm thick organic single-crystals (OSCs) by the scanning Kelvin probe microscopy (SKPM) has been demonstrated. Electrical and SKPM investigations were performed at ambient conditions on electrostatically bonded sub-μm thick rubrene single-crystals on Si back-gated FET structures with SiO2 dielectric and metal source drain contacts recessed in the oxide. It was observed that SKPM can be successfully applied to map the local electric potential at the sub-μm thick single-crystal/dielectric interface under bias. This allows determining the contact and channel resistances, their bias dependences, and provides access to the intrinsic electronic transport and interfacial effects in semi-conducting single-crystals.

Original languageEnglish
Pages (from-to)2267-2273
Number of pages7
JournalAdvanced Materials
Volume19
Issue number17
DOIs
Publication statusPublished - Sep 3 2007

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Luo, Y., Gustavo, F., Henry, J. Y., Mathevet, F., Lefloch, F., Sanquer, M., Rannou, P., & Grévin, B. (2007). Probing local electronic transport at the organic single-crystal/dielectric interface. Advanced Materials, 19(17), 2267-2273. https://doi.org/10.1002/adma.200700913