Abstract
Nowadays, as technology developing, traditional semiconductor material such as silicon (Si) could not satisfy the requirement of conditions in high frequency and high power environment. SiC (silicon carbide) has been recently applied in the semiconductor industry and optical components for its high hardness, excellent thermal conductivity, good chemical stability, wide band-gap, high critical electron mobility and so on. However for its hardness and chemical, mechanical stability, SiC is difficult to be processed. To overcome the difficulty in SiC polishing, the processing atmosphere is controlled by using the Bell-Jar type CMP apparatus which covers the entire elements of CMP with a pressure-resistant sealed chamber. The surrounding atmosphere, such as gas pressure and gas species may have a specific influence on CMP characteristics. The key for enhancing the SiC removal rate is regarded as the oxidation. To clarify the effect of oxidation, oxygen rich and lack of oxygen conditions are examined and the mechanism of SiC CMP is evaluated.
| Original language | English |
|---|---|
| Title of host publication | ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 279-282 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479955565 |
| DOIs | |
| Publication status | Published - Jan 20 2015 |
| Event | 11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, Japan Duration: Nov 19 2014 → Nov 21 2014 |
Publication series
| Name | ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 |
|---|
Other
| Other | 11th International Conference on Planarization/CMP Technology, ICPT 2014 |
|---|---|
| Country | Japan |
| City | Kobe |
| Period | 11/19/14 → 11/21/14 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Hardware and Architecture
Cite this
Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment. / Zhang, Ji; Kurokawa, Syuhei; Hayashi, Terutake; Asakawa, Eiji; Wang, Chengwu.
ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 279-282 7017299 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment
AU - Zhang, Ji
AU - Kurokawa, Syuhei
AU - Hayashi, Terutake
AU - Asakawa, Eiji
AU - Wang, Chengwu
PY - 2015/1/20
Y1 - 2015/1/20
N2 - Nowadays, as technology developing, traditional semiconductor material such as silicon (Si) could not satisfy the requirement of conditions in high frequency and high power environment. SiC (silicon carbide) has been recently applied in the semiconductor industry and optical components for its high hardness, excellent thermal conductivity, good chemical stability, wide band-gap, high critical electron mobility and so on. However for its hardness and chemical, mechanical stability, SiC is difficult to be processed. To overcome the difficulty in SiC polishing, the processing atmosphere is controlled by using the Bell-Jar type CMP apparatus which covers the entire elements of CMP with a pressure-resistant sealed chamber. The surrounding atmosphere, such as gas pressure and gas species may have a specific influence on CMP characteristics. The key for enhancing the SiC removal rate is regarded as the oxidation. To clarify the effect of oxidation, oxygen rich and lack of oxygen conditions are examined and the mechanism of SiC CMP is evaluated.
AB - Nowadays, as technology developing, traditional semiconductor material such as silicon (Si) could not satisfy the requirement of conditions in high frequency and high power environment. SiC (silicon carbide) has been recently applied in the semiconductor industry and optical components for its high hardness, excellent thermal conductivity, good chemical stability, wide band-gap, high critical electron mobility and so on. However for its hardness and chemical, mechanical stability, SiC is difficult to be processed. To overcome the difficulty in SiC polishing, the processing atmosphere is controlled by using the Bell-Jar type CMP apparatus which covers the entire elements of CMP with a pressure-resistant sealed chamber. The surrounding atmosphere, such as gas pressure and gas species may have a specific influence on CMP characteristics. The key for enhancing the SiC removal rate is regarded as the oxidation. To clarify the effect of oxidation, oxygen rich and lack of oxygen conditions are examined and the mechanism of SiC CMP is evaluated.
UR - http://www.scopus.com/inward/record.url?scp=84925372215&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925372215&partnerID=8YFLogxK
U2 - 10.1109/ICPT.2014.7017299
DO - 10.1109/ICPT.2014.7017299
M3 - Conference contribution
AN - SCOPUS:84925372215
T3 - ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
SP - 279
EP - 282
BT - ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -