Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment

Ji Zhang, Syuhei Kurokawa, Terutake Hayashi, Eiji Asakawa, Chengwu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nowadays, as technology developing, traditional semiconductor material such as silicon (Si) could not satisfy the requirement of conditions in high frequency and high power environment. SiC (silicon carbide) has been recently applied in the semiconductor industry and optical components for its high hardness, excellent thermal conductivity, good chemical stability, wide band-gap, high critical electron mobility and so on. However for its hardness and chemical, mechanical stability, SiC is difficult to be processed. To overcome the difficulty in SiC polishing, the processing atmosphere is controlled by using the Bell-Jar type CMP apparatus which covers the entire elements of CMP with a pressure-resistant sealed chamber. The surrounding atmosphere, such as gas pressure and gas species may have a specific influence on CMP characteristics. The key for enhancing the SiC removal rate is regarded as the oxidation. To clarify the effect of oxidation, oxygen rich and lack of oxygen conditions are examined and the mechanism of SiC CMP is evaluated.

Original languageEnglish
Title of host publicationICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages279-282
Number of pages4
ISBN (Electronic)9781479955565
DOIs
Publication statusPublished - Jan 20 2015
Event11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, Japan
Duration: Nov 19 2014Nov 21 2014

Other

Other11th International Conference on Planarization/CMP Technology, ICPT 2014
CountryJapan
CityKobe
Period11/19/1411/21/14

Fingerprint

Silicon carbide
Oxidation
Processing
Hardness
Semiconductor materials
Oxygen
Mechanical stability
Electron mobility
Chemical stability
Polishing
Gases
Thermal conductivity
Energy gap
Protective atmospheres
Silicon
Industry

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

Zhang, J., Kurokawa, S., Hayashi, T., Asakawa, E., & Wang, C. (2015). Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment. In ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 (pp. 279-282). [7017299] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICPT.2014.7017299

Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment. / Zhang, Ji; Kurokawa, Syuhei; Hayashi, Terutake; Asakawa, Eiji; Wang, Chengwu.

ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 279-282 7017299.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, J, Kurokawa, S, Hayashi, T, Asakawa, E & Wang, C 2015, Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment. in ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014., 7017299, Institute of Electrical and Electronics Engineers Inc., pp. 279-282, 11th International Conference on Planarization/CMP Technology, ICPT 2014, Kobe, Japan, 11/19/14. https://doi.org/10.1109/ICPT.2014.7017299
Zhang J, Kurokawa S, Hayashi T, Asakawa E, Wang C. Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment. In ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 279-282. 7017299 https://doi.org/10.1109/ICPT.2014.7017299
Zhang, Ji ; Kurokawa, Syuhei ; Hayashi, Terutake ; Asakawa, Eiji ; Wang, Chengwu. / Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment. ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 279-282
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