Processing properties of strong oxidizing slurry and effect of processing atmosphere in SiC-CMP

Tao Yin, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Tsutomu Yamazaki, Zhida Wang, Zhe Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP experiment with the new type CMP machine (Bell-jar) by using the slurry with strong oxidant(KMnO4). We realize the high speed CMP processing by changing the amount of oxidant, slurry pH, abrasive concentration, rotation speed, and the processing atmosphere. By using strong oxidant agent, a high removal rate can be obtained on C-face, so we can consider that C-face of SiC wafer can easily be oxidized. On Si-face of SiC wafer, however, the removal rate depends on pH and abrasive concentration, because a high oxidization speed can inhibit the CMP process. The processing mechanism of slurry by adding KMNO4 is discussed and one of the most effective processing conditions for SiC-CMP is proposed.

Original languageEnglish
Title of host publicationICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
PublisherVDE Verlag GmbH
Pages333-338
Number of pages6
ISBN (Electronic)9783800734528
Publication statusPublished - 2012
Event2012 International Conference on Planarization/CMP Technology, ICPT 2012 - Grenoble, France
Duration: Oct 15 2012Oct 17 2012

Publication series

NameICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings

Conference

Conference2012 International Conference on Planarization/CMP Technology, ICPT 2012
CountryFrance
CityGrenoble
Period10/15/1210/17/12

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials

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