Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

Tomohide Kakeya, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Michio Kondo

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

Original languageEnglish
Pages (from-to)288-291
Number of pages4
JournalThin Solid Films
Volume506-507
DOIs
Publication statusPublished - May 26 2006

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Crystalline materials
Heating
Temperature
crystallinity
Substrates
heating
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges. / Kakeya, Tomohide; Koga, Kazunori; Shiratani, Masaharu; Watanabe, Yukio; Kondo, Michio.

In: Thin Solid Films, Vol. 506-507, 26.05.2006, p. 288-291.

Research output: Contribution to journalArticle

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