Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

Tomohide Kakeya; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Michio Kondo

doi:10.1016/j.tsf.2005.08.090

Production of crystalline Si nano-clusters using pulsed H₂ + SiH₄ VHF discharges

Tomohide Kakeya, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Michio Kondo

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Crystalline Si nano-clusters are successfully produced using pulsed H ₂ + SiH₄ VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

Original language	English
Pages (from-to)	288-291
Number of pages	4
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.090
Publication status	Published - May 26 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.090

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title = "Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges",

abstract = "Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.",

author = "Tomohide Kakeya and Kazunori Koga and Masaharu Shiratani and Yukio Watanabe and Michio Kondo",

note = "Funding Information: This work was supported partly by New Energy and Industrial Technology Development Organization (NEDO). The preparation of the experimental setup by Messrs. T. Kinoshita and H. Matsuzaki was greatly helpful. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.tsf.2005.08.090",

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AU - Kakeya, Tomohide

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

AU - Kondo, Michio

N1 - Funding Information: This work was supported partly by New Energy and Industrial Technology Development Organization (NEDO). The preparation of the experimental setup by Messrs. T. Kinoshita and H. Matsuzaki was greatly helpful. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

AB - Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

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JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Production of crystalline Si nano-clusters using pulsed H₂ + SiH₄ VHF discharges

Abstract

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