Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

Tomohide Kakeya; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Michio Kondo

doi:10.1016/j.tsf.2005.08.090

Production of crystalline Si nano-clusters using pulsed H₂ + SiH₄ VHF discharges

Tomohide Kakeya, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Michio Kondo

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Crystalline Si nano-clusters are successfully produced using pulsed H ₂ + SiH₄ VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

Original language	English
Pages (from-to)	288-291
Number of pages	4
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.090
Publication status	Published - May 26 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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abstract = "Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.",

author = "Tomohide Kakeya and Kazunori Koga and Masaharu Shiratani and Yukio Watanabe and Michio Kondo",

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AU - Watanabe, Yukio

AU - Kondo, Michio

PY - 2006/5/26

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