Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

Tomohide Kakeya; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Michio Kondo

doi:10.1016/j.tsf.2005.08.090

Production of crystalline Si nano-clusters using pulsed H₂ + SiH₄ VHF discharges

Tomohide Kakeya, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Michio Kondo

Research output: Contribution to journal › Article

29 Citations (Scopus)

Abstract

Crystalline Si nano-clusters are successfully produced using pulsed H ₂ + SiH₄ VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

Original language	English
Pages (from-to)	288-291
Number of pages	4
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.090
Publication status	Published - May 26 2006

Fingerprint

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Kakeya, T., Koga, K., Shiratani, M., Watanabe, Y., & Kondo, M. (2006). Production of crystalline Si nano-clusters using pulsed H₂ + SiH₄ VHF discharges. Thin Solid Films, 506-507, 288-291. https://doi.org/10.1016/j.tsf.2005.08.090

@article{79b86c25d1f94a3ebd5c427d5017a2dc,

title = "Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges",

abstract = "Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100{\%} crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.",

author = "Tomohide Kakeya and Kazunori Koga and Masaharu Shiratani and Yukio Watanabe and Michio Kondo",

year = "2006",

month = "5",

day = "26",

doi = "10.1016/j.tsf.2005.08.090",

language = "English",

volume = "506-507",

pages = "288--291",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

AU - Kakeya, Tomohide

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

AU - Kondo, Michio

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

AB - Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

UR - http://www.scopus.com/inward/record.url?scp=33645242722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645242722&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.08.090

DO - 10.1016/j.tsf.2005.08.090

M3 - Article

AN - SCOPUS:33645242722

VL - 506-507

SP - 288

EP - 291

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Access to Document

10.1016/j.tsf.2005.08.090