Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave

Ryota Hidaka, Toru Yamaguchi, Akihisa Tsuruta, Masayoshi Tanaka, Yoshinobu Kawai

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

    Original languageEnglish
    Pages (from-to)1590-1593
    Number of pages4
    JournalReview of Scientific Instruments
    Volume65
    Issue number5
    DOIs
    Publication statusPublished - Dec 1 1994

    Fingerprint

    Electron cyclotron resonance
    electron cyclotron resonance
    Microwaves
    Plasmas
    microwaves
    Plasma density
    Silicon wafers
    plasma density
    Chemical vapor deposition
    Methane
    methane
    vapor deposition
    wafers
    silicon
    Gases
    gases

    All Science Journal Classification (ASJC) codes

    • Instrumentation

    Cite this

    Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave. / Hidaka, Ryota; Yamaguchi, Toru; Tsuruta, Akihisa; Tanaka, Masayoshi; Kawai, Yoshinobu.

    In: Review of Scientific Instruments, Vol. 65, No. 5, 01.12.1994, p. 1590-1593.

    Research output: Contribution to journalArticle

    Hidaka, Ryota ; Yamaguchi, Toru ; Tsuruta, Akihisa ; Tanaka, Masayoshi ; Kawai, Yoshinobu. / Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave. In: Review of Scientific Instruments. 1994 ; Vol. 65, No. 5. pp. 1590-1593.
    @article{88e5be372c924d0cbb1cefd34b4dfcae,
    title = "Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave",
    abstract = "An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).",
    author = "Ryota Hidaka and Toru Yamaguchi and Akihisa Tsuruta and Masayoshi Tanaka and Yoshinobu Kawai",
    year = "1994",
    month = "12",
    day = "1",
    doi = "10.1063/1.1144897",
    language = "English",
    volume = "65",
    pages = "1590--1593",
    journal = "Review of Scientific Instruments",
    issn = "0034-6748",
    publisher = "American Institute of Physics Publising LLC",
    number = "5",

    }

    TY - JOUR

    T1 - Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave

    AU - Hidaka, Ryota

    AU - Yamaguchi, Toru

    AU - Tsuruta, Akihisa

    AU - Tanaka, Masayoshi

    AU - Kawai, Yoshinobu

    PY - 1994/12/1

    Y1 - 1994/12/1

    N2 - An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

    AB - An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

    UR - http://www.scopus.com/inward/record.url?scp=36449000787&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=36449000787&partnerID=8YFLogxK

    U2 - 10.1063/1.1144897

    DO - 10.1063/1.1144897

    M3 - Article

    AN - SCOPUS:36449000787

    VL - 65

    SP - 1590

    EP - 1593

    JO - Review of Scientific Instruments

    JF - Review of Scientific Instruments

    SN - 0034-6748

    IS - 5

    ER -