An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).
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