Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave

Ryota Hidaka; Toru Yamaguchi; Akihisa Tsuruta; Masayoshi Tanaka; Yoshinobu Kawai

doi:10.1063/1.1144897

Production of electron cyclotron resonance plasma for uniform deposition using a TE₀₁ mode microwave

Ryota Hidaka, Toru Yamaguchi, Akihisa Tsuruta, Masayoshi Tanaka, Yoshinobu Kawai

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE₀₁ mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE₀₁ mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

Original language	English
Pages (from-to)	1590-1593
Number of pages	4
Journal	Review of Scientific Instruments
Volume	65
Issue number	5
DOIs	https://doi.org/10.1063/1.1144897
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Instrumentation

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10.1063/1.1144897

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title = "Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave",

abstract = "An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).",

author = "Ryota Hidaka and Toru Yamaguchi and Akihisa Tsuruta and Masayoshi Tanaka and Yoshinobu Kawai",

year = "1994",

doi = "10.1063/1.1144897",

language = "English",

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pages = "1590--1593",

journal = "Review of Scientific Instruments",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave

AU - Hidaka, Ryota

AU - Yamaguchi, Toru

AU - Tsuruta, Akihisa

AU - Tanaka, Masayoshi

AU - Kawai, Yoshinobu

PY - 1994

Y1 - 1994

N2 - An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

AB - An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

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Production of electron cyclotron resonance plasma for uniform deposition using a TE₀₁ mode microwave

Abstract

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