Production of low electron temperature ECR plasma for plasma processing

Naho Itagaki, Yoko Ueda, Nobuo Ishii, Yoshinobu Kawai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Low-electron-temperature ECR plasma with high electron density was realized under the mirror magnetic field configuration in the H2 and the Ar/N2 plasma. Especially, the electron temperature was observed to be less than 2 eV in the Ar/N2 plasma. It was found from the calculation of particle and power balance in steady state that the decrease in the electron temperature observed in the Ar/N2 plasma was due to the effect of the magnetic-mirror confinement of the N2 plasma. Furthermore, our calculated results suggest that the effect of magnetic-mirror on the decrease in the electron temperature depends on the collisional cross section between electrons and neutral particles.

Original languageEnglish
Pages (from-to)202-207
Number of pages6
JournalThin Solid Films
Volume390
Issue number1-2
DOIs
Publication statusPublished - Jun 30 2001

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Plasma applications
Electron temperature
electron energy
Plasmas
Magnetic mirrors
magnetic mirrors
Plasma confinement
magnetic field configurations
neutral particles
Carrier concentration
Mirrors
Magnetic fields
mirrors
Electrons
cross sections
electrons

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Production of low electron temperature ECR plasma for plasma processing. / Itagaki, Naho; Ueda, Yoko; Ishii, Nobuo; Kawai, Yoshinobu.

In: Thin Solid Films, Vol. 390, No. 1-2, 30.06.2001, p. 202-207.

Research output: Contribution to journalArticle

Itagaki, Naho ; Ueda, Yoko ; Ishii, Nobuo ; Kawai, Yoshinobu. / Production of low electron temperature ECR plasma for plasma processing. In: Thin Solid Films. 2001 ; Vol. 390, No. 1-2. pp. 202-207.
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