Production of low electron temperature ECR plasma for thin film deposition

Naho Itagaki; Yoko Ueda; Nobuo Ishii; Yoshinobu Kawai

doi:10.1016/S0257-8972(01)01204-X

Production of low electron temperature ECR plasma for thin film deposition

Naho Itagaki, Yoko Ueda, Nobuo Ishii, Yoshinobu Kawai

Department of I&E Visionaries

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N₂ and H₂ gasses. It was found that the temperature parallel to the magnetic field was lower than the temperature perpendicular to the field by 5 ∼ 50% and decreased at the 'throat' of the mirror magnetic field. Especially, the electron temperature parallel to the magnetic field was observed to be less than 2 eV in the Ar/N₂ and the H₂ plasma. Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at the 'throat' of mirror magnetic field because of the decrease in ion bombardment to the substrate.

Original language	English
Pages (from-to)	546-550
Number of pages	5
Journal	Surface and Coatings Technology
Volume	142-144
DOIs	https://doi.org/10.1016/S0257-8972(01)01204-X
Publication status	Published - Jul 2001

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(01)01204-X

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@article{a03937c703f74dc5b4b8b49160b0ead2,

title = "Production of low electron temperature ECR plasma for thin film deposition",

abstract = "An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N2 and H2 gasses. It was found that the temperature parallel to the magnetic field was lower than the temperature perpendicular to the field by 5 ∼ 50% and decreased at the 'throat' of the mirror magnetic field. Especially, the electron temperature parallel to the magnetic field was observed to be less than 2 eV in the Ar/N2 and the H2 plasma. Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at the 'throat' of mirror magnetic field because of the decrease in ion bombardment to the substrate.",

author = "Naho Itagaki and Yoko Ueda and Nobuo Ishii and Yoshinobu Kawai",

year = "2001",

month = jul,

doi = "10.1016/S0257-8972(01)01204-X",

language = "English",

volume = "142-144",

pages = "546--550",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

}

TY - JOUR

T1 - Production of low electron temperature ECR plasma for thin film deposition

AU - Itagaki, Naho

AU - Ueda, Yoko

AU - Ishii, Nobuo

AU - Kawai, Yoshinobu

PY - 2001/7

Y1 - 2001/7

N2 - An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N2 and H2 gasses. It was found that the temperature parallel to the magnetic field was lower than the temperature perpendicular to the field by 5 ∼ 50% and decreased at the 'throat' of the mirror magnetic field. Especially, the electron temperature parallel to the magnetic field was observed to be less than 2 eV in the Ar/N2 and the H2 plasma. Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at the 'throat' of mirror magnetic field because of the decrease in ion bombardment to the substrate.

AB - An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N2 and H2 gasses. It was found that the temperature parallel to the magnetic field was lower than the temperature perpendicular to the field by 5 ∼ 50% and decreased at the 'throat' of the mirror magnetic field. Especially, the electron temperature parallel to the magnetic field was observed to be less than 2 eV in the Ar/N2 and the H2 plasma. Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at the 'throat' of mirror magnetic field because of the decrease in ion bombardment to the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0035387820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035387820&partnerID=8YFLogxK

U2 - 10.1016/S0257-8972(01)01204-X

DO - 10.1016/S0257-8972(01)01204-X

M3 - Article

AN - SCOPUS:0035387820

SN - 0257-8972

VL - 142-144

SP - 546

EP - 550

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Production of low electron temperature ECR plasma for thin film deposition

Abstract

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