Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density

Rawiwan Chaleawpong, Nathaporn Promros, Peerasil Charoenyuenyao, Adison Nopparuchikun, Phongsaphak Sittimart, Tomohiro Nogami, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

Abstract

Without a post-annealing procedure, the β-FeSi2 thin films are epitaxially grown on Si(111) wafer substrates via facing-targets direct-current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 °C. The resultant p-type Si/n-type β-FeSi2 heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo-detective performance is observed from the measured dark and irradiated current density–voltage curves of the created heterojunctions. Both of the conductance–voltage (G/ω–V) and capacitance–voltage (C–V) measurements at different frequencies (f) in the range of 5 kHz–1 MHz are performed in the dark at room temperature. The interface state density (Nss) and series resistance (Rs) in the created p-type Si/n-type β-FeSi2 heterojunctions are computed and analyzed from the measured C–V–f and G/ω–V–f curves. Nss is found to be 3.48 × 1012 eV−1 cm−2 at 5 kHz and decreased to 4.68 × 1011 eV−1 cm−2 at 1 MHz. Moreover, the values of Rs at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of Nss and Rs in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.

Original languageEnglish
Article number1701022
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume215
Issue number20
DOIs
Publication statusPublished - Oct 24 2018

Fingerprint

Facings
Interface states
Sputtering
Heterojunctions
heterojunctions
sputtering
direct current
evaluation
room temperature
Substrates
curves
Bias voltage
dark current
Epitaxial growth
Leakage currents
Temperature
leakage
wafers
Annealing
Heating

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density. / Chaleawpong, Rawiwan; Promros, Nathaporn; Charoenyuenyao, Peerasil; Nopparuchikun, Adison; Sittimart, Phongsaphak; Nogami, Tomohiro; Yoshitake, Tsuyoshi.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 215, No. 20, 1701022, 24.10.2018.

Research output: Contribution to journalArticle

Chaleawpong, Rawiwan ; Promros, Nathaporn ; Charoenyuenyao, Peerasil ; Nopparuchikun, Adison ; Sittimart, Phongsaphak ; Nogami, Tomohiro ; Yoshitake, Tsuyoshi. / Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density. In: Physica Status Solidi (A) Applications and Materials Science. 2018 ; Vol. 215, No. 20.
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