TY - JOUR
T1 - Progress and perspectives in dry processes for nanoscale feature fabrication
T2 - Fine pattern transfer and high-aspect-ratio feature formation
AU - Iwase, Taku
AU - Kamaji, Yoshito
AU - Kang, Song Yun
AU - Koga, Kazunori
AU - Kuboi, Nobuyuki
AU - Nakamura, Moritaka
AU - Negishi, Nobuyuki
AU - Nozaki, Tomohiro
AU - Nunomura, Shota
AU - Ogawa, Daisuke
AU - Omura, Mitsuhiro
AU - Shimizu, Tetsuji
AU - Shinoda, Kazunori
AU - Sonoda, Yasushi
AU - Suzuki, Haruka
AU - Takahashi, Kazuo
AU - Tsutsumi, Takayoshi
AU - Yoshikawa, Kenichi
AU - Ishijima, Tatsuo
AU - Ishikawa, Kenji
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - Dramatic advances are being made in dry processing technologies. Atomic scale precision below 10 nm is now possible with fine patterning technologies for high-volume manufacturing of semiconductor devices. The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. Here we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to fine pattern transfer, HAR feature formation, and multiple patterning as lithographic techniques. Finally, we address the major challenges shared across the plasma science and technology community.
AB - Dramatic advances are being made in dry processing technologies. Atomic scale precision below 10 nm is now possible with fine patterning technologies for high-volume manufacturing of semiconductor devices. The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. Here we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to fine pattern transfer, HAR feature formation, and multiple patterning as lithographic techniques. Finally, we address the major challenges shared across the plasma science and technology community.
UR - http://www.scopus.com/inward/record.url?scp=85072927816&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072927816&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab1638
DO - 10.7567/1347-4065/ab1638
M3 - Review article
AN - SCOPUS:85072927816
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SE
M1 - SE0802
ER -