Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Yoshihiro Kangawa, Tomonori Ito, Akinori Koukitu, Koichi Kakimoto

Research output: Contribution to journalReview article

8 Citations (Scopus)

Abstract

The surface stability, growth process, and structural stability of InGaN and InN are reviewed from a theoretical viewpoint. In 2001, a new theoretical approach based on an ab initio calculation was developed. This theoretical approach enables the investigation of the influence of growth conditions such as partial pressure and temperature on the surface stability. The theoretical approach is applied to the research on the In incorporation efficiency in InGaN grown on nonpolar and semipolar surfaces. The calculation results suggest that the N-H layer formed on such surfaces has a crucial role in In incorporation. Moreover, the structural stability of InN grown by pressurized-reactor MOVPE is reviewed. It was found by the theoretical approach that {11¯1¯} g facet formation causes the spontaneous formation of islands with the zinc-blende structure.

Original languageEnglish
Article number100202
JournalJapanese Journal of Applied Physics
Volume53
Issue number10
DOIs
Publication statusPublished - Oct 1 2014

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surface stability
structural stability
Epitaxial growth
epitaxy
partial pressure
flat surfaces
zinc
reactors
Metallorganic vapor phase epitaxy
causes
Partial pressure
Zinc
temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Progress in theoretical approach to InGaN and InN epitaxy : In incorporation efficiency and structural stability. / Kangawa, Yoshihiro; Ito, Tomonori; Koukitu, Akinori; Kakimoto, Koichi.

In: Japanese Journal of Applied Physics, Vol. 53, No. 10, 100202, 01.10.2014.

Research output: Contribution to journalReview article

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