Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides

Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Masaki Kanai, Annop Klamchuen, Sakon Rahong, Gang Meng, Mati Horprathum, Bo Xu, Fuwei Zhuge, Yong He, Bae Ho Park, Tomoji Kawai

Research output: Contribution to journalArticle

26 Citations (Scopus)


This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO x and CoOx planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.

Original languageEnglish
Pages (from-to)5684-5690
Number of pages7
JournalNano Letters
Issue number11
Publication statusPublished - Nov 14 2012
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this