This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO x and CoOx planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering