Properties and device applications of hydrogenated amorphous silicon carbide films

M. M. Rahman, C. Y. Yang, D. Sugiarto, A. S. Byrne, M. Ju, K. Tran, K. H. Lui, Tanemasa Asano, W. F. Stickle

Research output: Contribution to journalArticle

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Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films were deposited with a radio-frequency plasma-enhanced chemical vapor deposition system which utilizes a dc electric field applied independently of the inductively coupled rf field. The source gases were SiH4 and CH4. It was found that application of an electric field directed out of the substrate surface enhances the growth rate and yields some improvements in photoconductivity. The compositions of the films were evaluated by x-ray photoelectron spectroscopy for a range of source gas mixtures. In order to assess the applicability of a-SiC:H thin films, heterojunction a-SiC:H/crystalline Si (c-Si) diodes were fabricated and their electrical characteristics evaluated. The diode capacitance-voltage results confirmed a step junction, which was consistent with the abruptness of the interface demonstrated by high-resolution transmission electron microscopy. The heterojunction diodes also showed good rectifying properties, suggesting promise for a-SiC@B: H in device applications.

Original languageEnglish
Pages (from-to)7065-7070
Number of pages6
JournalJournal of Applied Physics
Volume67
Issue number11
DOIs
Publication statusPublished - Dec 1 1990

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silicon carbides
amorphous silicon
diodes
heterojunctions
electric fields
photoconductivity
x ray spectroscopy
gas mixtures
radio frequencies
capacitance
photoelectron spectroscopy
vapor deposition
transmission electron microscopy
high resolution
electric potential
thin films
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Rahman, M. M., Yang, C. Y., Sugiarto, D., Byrne, A. S., Ju, M., Tran, K., ... Stickle, W. F. (1990). Properties and device applications of hydrogenated amorphous silicon carbide films. Journal of Applied Physics, 67(11), 7065-7070. https://doi.org/10.1063/1.345055

Properties and device applications of hydrogenated amorphous silicon carbide films. / Rahman, M. M.; Yang, C. Y.; Sugiarto, D.; Byrne, A. S.; Ju, M.; Tran, K.; Lui, K. H.; Asano, Tanemasa; Stickle, W. F.

In: Journal of Applied Physics, Vol. 67, No. 11, 01.12.1990, p. 7065-7070.

Research output: Contribution to journalArticle

Rahman, MM, Yang, CY, Sugiarto, D, Byrne, AS, Ju, M, Tran, K, Lui, KH, Asano, T & Stickle, WF 1990, 'Properties and device applications of hydrogenated amorphous silicon carbide films', Journal of Applied Physics, vol. 67, no. 11, pp. 7065-7070. https://doi.org/10.1063/1.345055
Rahman MM, Yang CY, Sugiarto D, Byrne AS, Ju M, Tran K et al. Properties and device applications of hydrogenated amorphous silicon carbide films. Journal of Applied Physics. 1990 Dec 1;67(11):7065-7070. https://doi.org/10.1063/1.345055
Rahman, M. M. ; Yang, C. Y. ; Sugiarto, D. ; Byrne, A. S. ; Ju, M. ; Tran, K. ; Lui, K. H. ; Asano, Tanemasa ; Stickle, W. F. / Properties and device applications of hydrogenated amorphous silicon carbide films. In: Journal of Applied Physics. 1990 ; Vol. 67, No. 11. pp. 7065-7070.
@article{7c815cbfbe5d485cab1b4428bcc994f1,
title = "Properties and device applications of hydrogenated amorphous silicon carbide films",
abstract = "Hydrogenated amorphous silicon carbide (a-SiC:H) films were deposited with a radio-frequency plasma-enhanced chemical vapor deposition system which utilizes a dc electric field applied independently of the inductively coupled rf field. The source gases were SiH4 and CH4. It was found that application of an electric field directed out of the substrate surface enhances the growth rate and yields some improvements in photoconductivity. The compositions of the films were evaluated by x-ray photoelectron spectroscopy for a range of source gas mixtures. In order to assess the applicability of a-SiC:H thin films, heterojunction a-SiC:H/crystalline Si (c-Si) diodes were fabricated and their electrical characteristics evaluated. The diode capacitance-voltage results confirmed a step junction, which was consistent with the abruptness of the interface demonstrated by high-resolution transmission electron microscopy. The heterojunction diodes also showed good rectifying properties, suggesting promise for a-SiC@B: H in device applications.",
author = "Rahman, {M. M.} and Yang, {C. Y.} and D. Sugiarto and Byrne, {A. S.} and M. Ju and K. Tran and Lui, {K. H.} and Tanemasa Asano and Stickle, {W. F.}",
year = "1990",
month = "12",
day = "1",
doi = "10.1063/1.345055",
language = "English",
volume = "67",
pages = "7065--7070",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Properties and device applications of hydrogenated amorphous silicon carbide films

AU - Rahman, M. M.

AU - Yang, C. Y.

AU - Sugiarto, D.

AU - Byrne, A. S.

AU - Ju, M.

AU - Tran, K.

AU - Lui, K. H.

AU - Asano, Tanemasa

AU - Stickle, W. F.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Hydrogenated amorphous silicon carbide (a-SiC:H) films were deposited with a radio-frequency plasma-enhanced chemical vapor deposition system which utilizes a dc electric field applied independently of the inductively coupled rf field. The source gases were SiH4 and CH4. It was found that application of an electric field directed out of the substrate surface enhances the growth rate and yields some improvements in photoconductivity. The compositions of the films were evaluated by x-ray photoelectron spectroscopy for a range of source gas mixtures. In order to assess the applicability of a-SiC:H thin films, heterojunction a-SiC:H/crystalline Si (c-Si) diodes were fabricated and their electrical characteristics evaluated. The diode capacitance-voltage results confirmed a step junction, which was consistent with the abruptness of the interface demonstrated by high-resolution transmission electron microscopy. The heterojunction diodes also showed good rectifying properties, suggesting promise for a-SiC@B: H in device applications.

AB - Hydrogenated amorphous silicon carbide (a-SiC:H) films were deposited with a radio-frequency plasma-enhanced chemical vapor deposition system which utilizes a dc electric field applied independently of the inductively coupled rf field. The source gases were SiH4 and CH4. It was found that application of an electric field directed out of the substrate surface enhances the growth rate and yields some improvements in photoconductivity. The compositions of the films were evaluated by x-ray photoelectron spectroscopy for a range of source gas mixtures. In order to assess the applicability of a-SiC:H thin films, heterojunction a-SiC:H/crystalline Si (c-Si) diodes were fabricated and their electrical characteristics evaluated. The diode capacitance-voltage results confirmed a step junction, which was consistent with the abruptness of the interface demonstrated by high-resolution transmission electron microscopy. The heterojunction diodes also showed good rectifying properties, suggesting promise for a-SiC@B: H in device applications.

UR - http://www.scopus.com/inward/record.url?scp=0006198453&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006198453&partnerID=8YFLogxK

U2 - 10.1063/1.345055

DO - 10.1063/1.345055

M3 - Article

VL - 67

SP - 7065

EP - 7070

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -