Properties of metal doped tungsten oxide thin films for NOx gas sensors grown by PLD method combined with sputtering process

Hiroharu Kawasaki, Tsuyoshi Ueda, Yoshiaki Suda, Tamiko Ohshima

Research output: Contribution to journalConference articlepeer-review

72 Citations (Scopus)

Abstract

The gas sensors based on tungsten oxide (WO3) thin films and doped with different amount of gold (Au) or palladium (Pd) were synthesized by a new developed preparation system using the pulsed Nd:YAG (532 nm) laser deposition method combined with dc sputtering. The crystalline structure and crystallographic orientation of the prepared Au doped WO3 (WO 3-Au) thin films, measured by X-ray diffraction system, suggested that there were distinct peaks of WO3 (0 0 1) and (2 0 1) and weak peaks of WO3 (1 2 0), (1 1 1), (0 0 2) and (1 1 2). The maximum sensitivity for 200ppm NO2 were approximately 69 for WO 3-Au thin film and 24 for WO3-Pd thin film at the operating temperature of 300°C, respectively. These maximum sensitivities are higher than that of the non-doped WO3 sensor which sensitivity is about 17. This may be due to its electronic and/or chemical sensitization effect.

Original languageEnglish
Pages (from-to)266-269
Number of pages4
JournalSensors and Actuators, B: Chemical
Volume100
Issue number1-2
DOIs
Publication statusPublished - Jun 1 2004
Externally publishedYes
EventNew Materials and Technologies in Sensor Applications, Proceedings - Strasbourg, France
Duration: Jun 10 2003Jun 13 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Properties of metal doped tungsten oxide thin films for NO<sub>x</sub> gas sensors grown by PLD method combined with sputtering process'. Together they form a unique fingerprint.

Cite this