Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature

Masatoshi Mitsuya, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito

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Abstract

Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10-5 A/cm2 up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number7 B
Publication statusPublished - Jul 15 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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