Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature

Masatoshi Mitsuya; Norimasa Nukaga; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito

doi:10.1143/jjap.40.l758

Property improvement of 75 nm-thick directly-crystallized SrBi₂Ta₂O₉ thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature

Masatoshi Mitsuya, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Crystallized SrBi₂Ta₂O₉ (SBT) films were deposited on (111) Ir/TiO₂/SiO₂/Si substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10^-5 A/cm² up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.

Original language	English
Pages (from-to)	L758-L760
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	7 B
DOIs	https://doi.org/10.1143/jjap.40.l758
Publication status	Published - Jul 15 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.40.l758

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Property improvement of 75 nm-thick directly-crystallized SrBi₂Ta₂O₉ thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature. / Mitsuya, Masatoshi; Nukaga, Norimasa; Watanabe, Takayuki et al.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 7 B, 15.07.2001, p. L758-L760.

Research output: Contribution to journal › Article › peer-review

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title = "Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature",

abstract = "Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10-5 A/cm2 up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.",

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AU - Mitsuya, Masatoshi

AU - Nukaga, Norimasa

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Saito, Keisuke

PY - 2001/7/15

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N2 - Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10-5 A/cm2 up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.

AB - Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10-5 A/cm2 up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.

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Property improvement of 75 nm-thick directly-crystallized SrBi₂Ta₂O₉ thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature

Abstract

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