PO2-dependent nonohmic current-voltage characteristics and current-induced redox behavior of junctioned SrTiO3

Michitaka Ohtaki, Misako Ozaki, Koichi Eguchi

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Oxide semiconductor junctions formed by attaching p- and n-type SrTiO3 exhibits a markedly nonohmic current-voltage characteristics at the steady state, showing no typical rectifying characters. Although the voltages which appeared immediately after applying the currents, are completely linear vs. the current values, the probe voltages vary with time and finally result in a significantly nonlinear behavior strongly dependent on oxygen partial pressure, showing distinct asymmetry to the current direction. Separation of the voltage drop into those within the bulks and at the junction reveals that the highly resistive p-type SrTiO3 bulk near the junction is mainly responsible for the nonohmic character. For the p-type SrTiO3 single bulk, absorption of oxygen in the gas phase is observed on applying large bias currents, regardless of the current directions. However, the junctioned sample desorbs oxygen for the forward bias, while the reverse bias causes oxygen absorption. Conductivity changes of the highly resistive p-type SrTiO3 as a consequence of these current-induced redox behavior give a consistent explanation for the direction-dependent nonohmic character of the junctioned sample. Dissociation/association of oxygen due to a shift of the solid-gas equilibrium caused by the applied currents is discussed.

    Original languageEnglish
    Pages (from-to)1165-1173
    Number of pages9
    JournalJournal of the Electrochemical Society
    Volume145
    Issue number4
    DOIs
    Publication statusPublished - Jan 1 1998

    Fingerprint

    Induced currents
    Current voltage characteristics
    Oxygen
    Gases
    Semiconductor junctions
    Bias currents
    Electric potential
    Partial pressure
    Oxidation-Reduction
    strontium titanium oxide
    Association reactions
    Direction compound

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Surfaces, Coatings and Films
    • Electrochemistry
    • Materials Chemistry

    Cite this

    PO2-dependent nonohmic current-voltage characteristics and current-induced redox behavior of junctioned SrTiO3 . / Ohtaki, Michitaka; Ozaki, Misako; Eguchi, Koichi.

    In: Journal of the Electrochemical Society, Vol. 145, No. 4, 01.01.1998, p. 1165-1173.

    Research output: Contribution to journalArticle

    @article{b2072f6a53394239b5772848aefb45fc,
    title = "PO2-dependent nonohmic current-voltage characteristics and current-induced redox behavior of junctioned SrTiO3",
    abstract = "Oxide semiconductor junctions formed by attaching p- and n-type SrTiO3 exhibits a markedly nonohmic current-voltage characteristics at the steady state, showing no typical rectifying characters. Although the voltages which appeared immediately after applying the currents, are completely linear vs. the current values, the probe voltages vary with time and finally result in a significantly nonlinear behavior strongly dependent on oxygen partial pressure, showing distinct asymmetry to the current direction. Separation of the voltage drop into those within the bulks and at the junction reveals that the highly resistive p-type SrTiO3 bulk near the junction is mainly responsible for the nonohmic character. For the p-type SrTiO3 single bulk, absorption of oxygen in the gas phase is observed on applying large bias currents, regardless of the current directions. However, the junctioned sample desorbs oxygen for the forward bias, while the reverse bias causes oxygen absorption. Conductivity changes of the highly resistive p-type SrTiO3 as a consequence of these current-induced redox behavior give a consistent explanation for the direction-dependent nonohmic character of the junctioned sample. Dissociation/association of oxygen due to a shift of the solid-gas equilibrium caused by the applied currents is discussed.",
    author = "Michitaka Ohtaki and Misako Ozaki and Koichi Eguchi",
    year = "1998",
    month = "1",
    day = "1",
    doi = "10.1149/1.1838433",
    language = "English",
    volume = "145",
    pages = "1165--1173",
    journal = "Journal of the Electrochemical Society",
    issn = "0013-4651",
    publisher = "Electrochemical Society, Inc.",
    number = "4",

    }

    TY - JOUR

    T1 - PO2-dependent nonohmic current-voltage characteristics and current-induced redox behavior of junctioned SrTiO3

    AU - Ohtaki, Michitaka

    AU - Ozaki, Misako

    AU - Eguchi, Koichi

    PY - 1998/1/1

    Y1 - 1998/1/1

    N2 - Oxide semiconductor junctions formed by attaching p- and n-type SrTiO3 exhibits a markedly nonohmic current-voltage characteristics at the steady state, showing no typical rectifying characters. Although the voltages which appeared immediately after applying the currents, are completely linear vs. the current values, the probe voltages vary with time and finally result in a significantly nonlinear behavior strongly dependent on oxygen partial pressure, showing distinct asymmetry to the current direction. Separation of the voltage drop into those within the bulks and at the junction reveals that the highly resistive p-type SrTiO3 bulk near the junction is mainly responsible for the nonohmic character. For the p-type SrTiO3 single bulk, absorption of oxygen in the gas phase is observed on applying large bias currents, regardless of the current directions. However, the junctioned sample desorbs oxygen for the forward bias, while the reverse bias causes oxygen absorption. Conductivity changes of the highly resistive p-type SrTiO3 as a consequence of these current-induced redox behavior give a consistent explanation for the direction-dependent nonohmic character of the junctioned sample. Dissociation/association of oxygen due to a shift of the solid-gas equilibrium caused by the applied currents is discussed.

    AB - Oxide semiconductor junctions formed by attaching p- and n-type SrTiO3 exhibits a markedly nonohmic current-voltage characteristics at the steady state, showing no typical rectifying characters. Although the voltages which appeared immediately after applying the currents, are completely linear vs. the current values, the probe voltages vary with time and finally result in a significantly nonlinear behavior strongly dependent on oxygen partial pressure, showing distinct asymmetry to the current direction. Separation of the voltage drop into those within the bulks and at the junction reveals that the highly resistive p-type SrTiO3 bulk near the junction is mainly responsible for the nonohmic character. For the p-type SrTiO3 single bulk, absorption of oxygen in the gas phase is observed on applying large bias currents, regardless of the current directions. However, the junctioned sample desorbs oxygen for the forward bias, while the reverse bias causes oxygen absorption. Conductivity changes of the highly resistive p-type SrTiO3 as a consequence of these current-induced redox behavior give a consistent explanation for the direction-dependent nonohmic character of the junctioned sample. Dissociation/association of oxygen due to a shift of the solid-gas equilibrium caused by the applied currents is discussed.

    UR - http://www.scopus.com/inward/record.url?scp=0032047977&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0032047977&partnerID=8YFLogxK

    U2 - 10.1149/1.1838433

    DO - 10.1149/1.1838433

    M3 - Article

    AN - SCOPUS:0032047977

    VL - 145

    SP - 1165

    EP - 1173

    JO - Journal of the Electrochemical Society

    JF - Journal of the Electrochemical Society

    SN - 0013-4651

    IS - 4

    ER -