Pt-silicide source and drain SOI-MOSFET operating in bi-channel modes

Mika Nishisaka, Yasuhiro Ochiai, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

The complementary operation of SOI-MOSFET with Pt-silicide source/drain using Schottky contacts is reported. It is demonstrated that the single MOSFET can operate at room temperature in both n- and p-channel modes, thus complementary circuit can be realized without any control of conduction-type of silicon active layer.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages74-75
Number of pages2
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: Jun 22 1998Jun 24 1998

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period6/22/986/24/98

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Nishisaka, M., Ochiai, Y., & Asano, T. (1998). Pt-silicide source and drain SOI-MOSFET operating in bi-channel modes. In Annual Device Research Conference Digest (pp. 74-75). IEEE.