Pulsed laser crystallization of silicon-germanium films

T. Sameshima, H. Watakabe, H. Kanno, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalConference article

19 Citations (Scopus)

Abstract

Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon-germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The transient conductance measurements reveled that germanium films were rapidly melted and solidified because of low latent heat compared to silicon films. Formation of silicon-germanium alloy was also observed in the case of laser annealing the Ge/Si layered structure. The crystalline volume ratio was estimated almost 1.0 for Si0.4Ge0.6 films because of small disordered electronic states at grain boundaries, while it was 0.85 for Si films.

Original languageEnglish
Pages (from-to)67-71
Number of pages5
JournalThin Solid Films
Volume487
Issue number1-2
DOIs
Publication statusPublished - Sep 1 2005
EventInternational Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications -
Duration: Sep 5 2004Sep 10 2004

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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