Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing

Emmanuel Paneerselvam, Nilesh J. Vasa, Daisuke Nakamura, I. A. Palani, Mitsuhiro Higashihata, M. S. Ramachandra Rao, Tiju Thomas

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing.

Original languageEnglish
Pages (from-to)312-317
Number of pages6
JournalMaterials Today: Proceedings
Publication statusPublished - 2019
Event2019 International Conference on Laser Deposition: Nanostructures, Hetero-structures and 2D layers, iCold 2019 - Moodbidri, India
Duration: Nov 27 2019Nov 29 2019

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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