TY - JOUR
T1 - Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing
AU - Paneerselvam, Emmanuel
AU - Vasa, Nilesh J.
AU - Nakamura, Daisuke
AU - Palani, I. A.
AU - Higashihata, Mitsuhiro
AU - Ramachandra Rao, M. S.
AU - Thomas, Tiju
N1 - Funding Information:
The authors are grateful to Dr. Santanu Mandal, Mr. Xavier (Universal Carborundum Limited) for providing SiC powder. Dr. R. Jayaganthan, IIT Roorkee for providing help in the preparation of SPS SiC targets. The authors also gratefully acknowledge the thin film characterization facility provided by Dr. A. Subrahmanyam at IIT Madras. This work is partially supported by DST-JSPS project DST/INT/JSPS/P-244/2017 and AMT Project DST/TDT/AMT/2017/047 (G). The authors like to acknowledge for providing financial support to “Establishment of Nano Functional Materials Technology Centre in IIT Madras” [Grant No: SR/NM/NAT-02/2005 ] by Department of Science and Technology (DST), India .
Publisher Copyright:
© 2019 Elsevier Ltd.
PY - 2019
Y1 - 2019
N2 - Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing.
AB - Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing.
UR - http://www.scopus.com/inward/record.url?scp=85097278853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85097278853&partnerID=8YFLogxK
U2 - 10.1016/j.matpr.2020.01.535
DO - 10.1016/j.matpr.2020.01.535
M3 - Conference article
AN - SCOPUS:85097278853
SN - 2214-7853
VL - 35
SP - 312
EP - 317
JO - Materials Today: Proceedings
JF - Materials Today: Proceedings
T2 - 2019 International Conference on Laser Deposition: Nanostructures, Hetero-structures and 2D layers, iCold 2019
Y2 - 27 November 2019 through 29 November 2019
ER -