Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing.
|Number of pages||6|
|Journal||Materials Today: Proceedings|
|Publication status||Published - 2019|
|Event||2019 International Conference on Laser Deposition: Nanostructures, Hetero-structures and 2D layers, iCold 2019 - Moodbidri, India|
Duration: Nov 27 2019 → Nov 29 2019
All Science Journal Classification (ASJC) codes
- Materials Science(all)