Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes

Yoichi Kawakami, Kohei Inoue, Akio Kaneta, Koichi Okamoto, Mitsuru Funato

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The internal quantum efficiency (IQE) in a GaN epilayer is quantified using transient lens (TL) spectroscopy and numerical simulations. TL spectroscopy can optically detect temperature and carrier changes induced in a photo-pumped GaN layer, and the observed temperature change is closely associated with non-radiative recombination processes that create heat. Then numerically solving diffusion equations, which represent the diffusion processes of the photo-generated heat and carriers, provide the spatiotemporal distributions. These distributions are subsequently converted into the refractive index distributions, which act as transient convex or concave lenses. Finally, ray-tracing simulations predict the TL signals. Comparing the experimentally obtained and simulated TL signals quantifies the generated heat and the IQE without the often-adopted assumption that non-radiative recombination processes are negligible at low temperatures.

Original languageEnglish
Article number105702
JournalJournal of Applied Physics
Volume117
Issue number10
DOIs
Publication statusPublished - Mar 14 2015

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quantum efficiency
lenses
heat
ray tracing
spectroscopy
simulation
refractivity
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes. / Kawakami, Yoichi; Inoue, Kohei; Kaneta, Akio; Okamoto, Koichi; Funato, Mitsuru.

In: Journal of Applied Physics, Vol. 117, No. 10, 105702, 14.03.2015.

Research output: Contribution to journalArticle

Kawakami, Yoichi ; Inoue, Kohei ; Kaneta, Akio ; Okamoto, Koichi ; Funato, Mitsuru. / Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes. In: Journal of Applied Physics. 2015 ; Vol. 117, No. 10.
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