Abstract
The internal quantum efficiency (IQE) in a GaN epilayer is quantified using transient lens (TL) spectroscopy and numerical simulations. TL spectroscopy can optically detect temperature and carrier changes induced in a photo-pumped GaN layer, and the observed temperature change is closely associated with non-radiative recombination processes that create heat. Then numerically solving diffusion equations, which represent the diffusion processes of the photo-generated heat and carriers, provide the spatiotemporal distributions. These distributions are subsequently converted into the refractive index distributions, which act as transient convex or concave lenses. Finally, ray-tracing simulations predict the TL signals. Comparing the experimentally obtained and simulated TL signals quantifies the generated heat and the IQE without the often-adopted assumption that non-radiative recombination processes are negligible at low temperatures.
| Original language | English |
|---|---|
| Article number | 105702 |
| Journal | Journal of Applied Physics |
| Volume | 117 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Mar 14 2015 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes. / Kawakami, Yoichi; Inoue, Kohei; Kaneta, Akio; Okamoto, Koichi; Funato, Mitsuru.
In: Journal of Applied Physics, Vol. 117, No. 10, 105702, 14.03.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes
AU - Kawakami, Yoichi
AU - Inoue, Kohei
AU - Kaneta, Akio
AU - Okamoto, Koichi
AU - Funato, Mitsuru
PY - 2015/3/14
Y1 - 2015/3/14
N2 - The internal quantum efficiency (IQE) in a GaN epilayer is quantified using transient lens (TL) spectroscopy and numerical simulations. TL spectroscopy can optically detect temperature and carrier changes induced in a photo-pumped GaN layer, and the observed temperature change is closely associated with non-radiative recombination processes that create heat. Then numerically solving diffusion equations, which represent the diffusion processes of the photo-generated heat and carriers, provide the spatiotemporal distributions. These distributions are subsequently converted into the refractive index distributions, which act as transient convex or concave lenses. Finally, ray-tracing simulations predict the TL signals. Comparing the experimentally obtained and simulated TL signals quantifies the generated heat and the IQE without the often-adopted assumption that non-radiative recombination processes are negligible at low temperatures.
AB - The internal quantum efficiency (IQE) in a GaN epilayer is quantified using transient lens (TL) spectroscopy and numerical simulations. TL spectroscopy can optically detect temperature and carrier changes induced in a photo-pumped GaN layer, and the observed temperature change is closely associated with non-radiative recombination processes that create heat. Then numerically solving diffusion equations, which represent the diffusion processes of the photo-generated heat and carriers, provide the spatiotemporal distributions. These distributions are subsequently converted into the refractive index distributions, which act as transient convex or concave lenses. Finally, ray-tracing simulations predict the TL signals. Comparing the experimentally obtained and simulated TL signals quantifies the generated heat and the IQE without the often-adopted assumption that non-radiative recombination processes are negligible at low temperatures.
UR - http://www.scopus.com/inward/record.url?scp=84924533952&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84924533952&partnerID=8YFLogxK
U2 - 10.1063/1.4914413
DO - 10.1063/1.4914413
M3 - Article
AN - SCOPUS:84924533952
VL - 117
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
M1 - 105702
ER -