Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy

S. Kaku, H. Eto, K. Nakamura, Yukio Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The nanoscopic properties of the clean, r free surface of a BaTiO 3 single crystal in an ultra-high c vacuum is examined. Atomic force microscopy, t piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180° domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180° domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency, or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180° domains.

Original languageEnglish
Title of host publication2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009
DOIs
Publication statusPublished - Dec 1 2009
Event2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009 - Xian, China
Duration: Aug 23 2009Aug 27 2009

Other

Other2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009
CountryChina
CityXian
Period8/23/098/27/09

Fingerprint

Microscopic examination
Single crystals
Depolarization
Shielding
Ferroelectric materials
Electrostatics
Atomic force microscopy
Contamination
Vacuum
Ions
Polarization
Oxygen
Experiments
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kaku, S., Eto, H., Nakamura, K., & Watanabe, Y. (2009). Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy. In 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009 [5307523] https://doi.org/10.1109/ISAF.2009.5307523

Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy. / Kaku, S.; Eto, H.; Nakamura, K.; Watanabe, Yukio.

2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009. 2009. 5307523.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kaku, S, Eto, H, Nakamura, K & Watanabe, Y 2009, Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy. in 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009., 5307523, 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009, Xian, China, 8/23/09. https://doi.org/10.1109/ISAF.2009.5307523
Kaku S, Eto H, Nakamura K, Watanabe Y. Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy. In 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009. 2009. 5307523 https://doi.org/10.1109/ISAF.2009.5307523
Kaku, S. ; Eto, H. ; Nakamura, K. ; Watanabe, Yukio. / Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy. 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009. 2009.
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