Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy

S. Kaku; H. Eto; K. Nakamura; Yukio Watanabe

doi:10.1109/ISAF.2009.5307523

Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy

S. Kaku, H. Eto, K. Nakamura, Yukio Watanabe

Condensed Matter Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The nanoscopic properties of the clean, r free surface of a BaTiO ₃ single crystal in an ultra-high c vacuum is examined. Atomic force microscopy, t piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180° domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180° domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency, or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180° domains.

Original language	English
Title of host publication	2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009
DOIs	https://doi.org/10.1109/ISAF.2009.5307523
Publication status	Published - Dec 1 2009
Event	2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009 - Xian, China Duration: Aug 23 2009 → Aug 27 2009

Other

Other	2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009
Country/Territory	China
City	Xian
Period	8/23/09 → 8/27/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/ISAF.2009.5307523

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Kaku, S, Eto, H, Nakamura, K & Watanabe, Y 2009, Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy. in 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009., 5307523, 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009, Xian, China, 8/23/09. https://doi.org/10.1109/ISAF.2009.5307523

@inproceedings{3d3b8375228344248b7013557a9619eb,

title = "Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy",

abstract = "The nanoscopic properties of the clean, r free surface of a BaTiO 3 single crystal in an ultra-high c vacuum is examined. Atomic force microscopy, t piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180° domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180° domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency, or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180° domains.",

author = "S. Kaku and H. Eto and K. Nakamura and Yukio Watanabe",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/ISAF.2009.5307523",

language = "English",

isbn = "9781424449699",

booktitle = "2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009",

note = "2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009 ; Conference date: 23-08-2009 Through 27-08-2009",

}

TY - GEN

T1 - Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy

AU - Kaku, S.

AU - Eto, H.

AU - Nakamura, K.

AU - Watanabe, Yukio

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The nanoscopic properties of the clean, r free surface of a BaTiO 3 single crystal in an ultra-high c vacuum is examined. Atomic force microscopy, t piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180° domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180° domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency, or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180° domains.

AB - The nanoscopic properties of the clean, r free surface of a BaTiO 3 single crystal in an ultra-high c vacuum is examined. Atomic force microscopy, t piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180° domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180° domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency, or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180° domains.

UR - http://www.scopus.com/inward/record.url?scp=74349088539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74349088539&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2009.5307523

DO - 10.1109/ISAF.2009.5307523

M3 - Conference contribution

AN - SCOPUS:74349088539

SN - 9781424449699

BT - 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009

T2 - 2009 18th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2009

Y2 - 23 August 2009 through 27 August 2009

ER -

Quantitative study of domain structure of BaTiO3 single crystal by UHV-sanning probe microscopy

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