A discussion on the role of anti-surfactant atoms in the form of an atomic nano-mask was presented. This was discussed with reference to specific examples of termination of dislocations in growth of GaN and quantum dot formation on the surface of substrate. The role of additional (doped) atoms for crystal growth was demonstrated.
|Number of pages||5|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2001|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics