Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene

Shinichi Tanabe, Makoto Takamura, Yuichi Harada, Hiroyuki Kageshima, Hiroki Hibino

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The quantum Hall effect has been observed in quasi-free-standing monolayer graphene on SiC for the first time. This was achieved by decreasing the carrier density while applying gate voltage in top-gated devices. The charge neutrality point was also clearly observed, which has not been reported in top-gated structures. The mobilities at constant carrier densities did not show apparent temperature dependence up to 300 K, and conductivity was linearly dependent on carrier density. These results indicate that Coulomb scattering induced by charged impurities limits the mobility of quasi-free-standing monolayer graphene up to 300 K.

Original languageEnglish
Article number125101
JournalApplied Physics Express
Volume5
Issue number12
DOIs
Publication statusPublished - Dec 1 2012
Externally publishedYes

Fingerprint

Quantum Hall effect
quantum Hall effect
Graphene
Carrier concentration
Monolayers
graphene
Scattering
scattering
Impurities
impurities
conductivity
temperature dependence
Electric potential
electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene. / Tanabe, Shinichi; Takamura, Makoto; Harada, Yuichi; Kageshima, Hiroyuki; Hibino, Hiroki.

In: Applied Physics Express, Vol. 5, No. 12, 125101, 01.12.2012.

Research output: Contribution to journalArticle

Tanabe, Shinichi ; Takamura, Makoto ; Harada, Yuichi ; Kageshima, Hiroyuki ; Hibino, Hiroki. / Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene. In: Applied Physics Express. 2012 ; Vol. 5, No. 12.
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