Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Taizoh Sadoh, Jong Hyeok Park, Rikuta Aoki, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (∼300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages143-146
Number of pages4
ISBN (Electronic)9784863484771
DOIs
Publication statusPublished - Jul 30 2015
Event22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 - Kyoto, Japan
Duration: Jul 1 2015Jul 4 2015

Publication series

NameProceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015
CountryJapan
CityKyoto
Period7/1/157/4/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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