Radiation damage in epitaxial CaF2films on Si substrates produced by 150 keV Ar+ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)