TY - JOUR
T1 - Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation
AU - Ishiwara, Hiroshi
AU - Orihara, Kouzo
AU - Asano, Tanemasa
PY - 1983/7
Y1 - 1983/7
N2 - Radiation damage in epitaxial CaF2films on Si substrates produced by 150 keV Ar+ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.
AB - Radiation damage in epitaxial CaF2films on Si substrates produced by 150 keV Ar+ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.
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U2 - 10.1143/JJAP.22.L458
DO - 10.1143/JJAP.22.L458
M3 - Article
AN - SCOPUS:0020792836
SN - 0021-4922
VL - 22
SP - L458-L460
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7
ER -