Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation

Hiroshi Ishiwara, Kouzo Orihara, Tanemasa Asano

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Abstract

Radiation damage in epitaxial CaF2films on Si substrates produced by 150 keV Ar+ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.

Original languageEnglish
Pages (from-to)L458-L460
JournalJapanese Journal of Applied Physics
Volume22
Issue number7
DOIs
Publication statusPublished - Jul 1983

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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