Abstract
Radiation damage effects of silicon PIN photodiodes were studied by using evaporation neutrons from nuclear spallation reactions of a copper target with 12 GeV protons. Photodiode samples were placed in the backward direction from the copper target and neutron flux was determined by the foil activation method. The average neutron energy was estimated to be about 6 MeV. The damage effects were observed in terms of the increase of leakage current with reverse voltage which is expected to be approximately proportional to radiation dose of neutrons. The present result of the leakage current constant is of the order of 3 to 4 times those measured by using identical photodiodes exposed to reactor neutrons with the average energy of about 2 MeV. The observed energy dependence of the leakage current constant can be qualitatively explained by the NRT model.
| Original language | English |
|---|---|
| Pages (from-to) | 1957-1962 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 28 |
| Issue number | 10 R |
| DOIs | |
| Publication status | Published - Jan 1 1989 |
| Externally published | Yes |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Radiation damage of silicon junction photodiodes by evaporation neutrons from nuclear spallation reactions with 12 gev protons. / Arima, Tatsumi; Asano, Yuzo; Hasegawa, Masami; Mori, Shigeki; Kondo, Takahiko; Noguchi, Masaharu; Ohsugi, Takashi; Taketani, Atsushi.
In: Japanese Journal of Applied Physics, Vol. 28, No. 10 R, 01.01.1989, p. 1957-1962.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Radiation damage of silicon junction photodiodes by evaporation neutrons from nuclear spallation reactions with 12 gev protons
AU - Arima, Tatsumi
AU - Asano, Yuzo
AU - Hasegawa, Masami
AU - Mori, Shigeki
AU - Kondo, Takahiko
AU - Noguchi, Masaharu
AU - Ohsugi, Takashi
AU - Taketani, Atsushi
PY - 1989/1/1
Y1 - 1989/1/1
N2 - Radiation damage effects of silicon PIN photodiodes were studied by using evaporation neutrons from nuclear spallation reactions of a copper target with 12 GeV protons. Photodiode samples were placed in the backward direction from the copper target and neutron flux was determined by the foil activation method. The average neutron energy was estimated to be about 6 MeV. The damage effects were observed in terms of the increase of leakage current with reverse voltage which is expected to be approximately proportional to radiation dose of neutrons. The present result of the leakage current constant is of the order of 3 to 4 times those measured by using identical photodiodes exposed to reactor neutrons with the average energy of about 2 MeV. The observed energy dependence of the leakage current constant can be qualitatively explained by the NRT model.
AB - Radiation damage effects of silicon PIN photodiodes were studied by using evaporation neutrons from nuclear spallation reactions of a copper target with 12 GeV protons. Photodiode samples were placed in the backward direction from the copper target and neutron flux was determined by the foil activation method. The average neutron energy was estimated to be about 6 MeV. The damage effects were observed in terms of the increase of leakage current with reverse voltage which is expected to be approximately proportional to radiation dose of neutrons. The present result of the leakage current constant is of the order of 3 to 4 times those measured by using identical photodiodes exposed to reactor neutrons with the average energy of about 2 MeV. The observed energy dependence of the leakage current constant can be qualitatively explained by the NRT model.
UR - http://www.scopus.com/inward/record.url?scp=0024752427&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024752427&partnerID=8YFLogxK
U2 - 10.1143/JJAP.28.1957
DO - 10.1143/JJAP.28.1957
M3 - Article
AN - SCOPUS:0024752427
VL - 28
SP - 1957
EP - 1962
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 R
ER -