Radiative and nonradiative recombination processes in GaN-based semiconductors

Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, T. Izumi, S. Saijou, K. Inoue, Y. Narukawa, T. Mukai, Sg Fujita

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Abstract

Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of InxGa1-xN-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical microscope, submicroscopic TRPL using scanning near field optical microscopy (SNOM) and pump-and-probe spectroscopy for the measurement of transient absorption/gain spectra. The obtained results are cited in the references.

Original languageEnglish
Pages (from-to)41-50
Number of pages10
JournalPhysica Status Solidi (A) Applied Research
Volume183
Issue number1
DOIs
Publication statusPublished - Jan 1 2001

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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