Radiative centers in layer semiconductor p-GaSe doped with Mn

Shigeru Shigetomi; Tetsuo Ikari; Hiroshi Nakashima

doi:10.1143/jjap.38.3506

Radiative centers in layer semiconductor p-GaSe doped with Mn

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

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Abstract

The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

Original language	English
Pages (from-to)	3506-3507
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.38.3506
Publication status	Published - Jun 1999

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Radiative centers in layer semiconductor p-GaSe doped with Mn",

abstract = "The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.",

author = "Shigeru Shigetomi and Tetsuo Ikari and Hiroshi Nakashima",

year = "1999",

month = jun,

doi = "10.1143/jjap.38.3506",

language = "English",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

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T1 - Radiative centers in layer semiconductor p-GaSe doped with Mn

AU - Shigetomi, Shigeru

AU - Ikari, Tetsuo

AU - Nakashima, Hiroshi

PY - 1999/6

Y1 - 1999/6

N2 - The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

AB - The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

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U2 - 10.1143/jjap.38.3506

DO - 10.1143/jjap.38.3506

M3 - Article

AN - SCOPUS:0032666392

SN - 0021-4922

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EP - 3507

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 6 A

ER -

Radiative centers in layer semiconductor p-GaSe doped with Mn

Abstract

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