Radiative centers in layer semiconductor p-GaSe doped with Mn

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

    Original languageEnglish
    Pages (from-to)3506-3507
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number6 A
    Publication statusPublished - Jun 1 1999

    Fingerprint

    Photoluminescence
    Semiconductor materials
    Electron transitions
    Valence bands
    Conduction bands
    photoluminescence
    conduction bands
    valence
    temperature dependence
    Temperature
    excitation
    energy

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Radiative centers in layer semiconductor p-GaSe doped with Mn. / Shigetomi, Shigeru; Ikari, Tetsuo; Nakashima, Hiroshi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 6 A, 01.06.1999, p. 3506-3507.

    Research output: Contribution to journalArticle

    @article{8a5af9f790f0497ca1bd2d7236cfecb5,
    title = "Radiative centers in layer semiconductor p-GaSe doped with Mn",
    abstract = "The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.{\%} have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.",
    author = "Shigeru Shigetomi and Tetsuo Ikari and Hiroshi Nakashima",
    year = "1999",
    month = "6",
    day = "1",
    language = "English",
    volume = "38",
    pages = "3506--3507",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Institute of Physics",
    number = "6 A",

    }

    TY - JOUR

    T1 - Radiative centers in layer semiconductor p-GaSe doped with Mn

    AU - Shigetomi, Shigeru

    AU - Ikari, Tetsuo

    AU - Nakashima, Hiroshi

    PY - 1999/6/1

    Y1 - 1999/6/1

    N2 - The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

    AB - The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

    UR - http://www.scopus.com/inward/record.url?scp=0032666392&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0032666392&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0032666392

    VL - 38

    SP - 3506

    EP - 3507

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 6 A

    ER -