Radiative centers in layer semiconductor p-GaSe doped with Mn

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

    Original languageEnglish
    Pages (from-to)3506-3507
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number6 A
    DOIs
    Publication statusPublished - Jun 1999

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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