Raman scattering of type-I clathrate compounds: A8Ga 16Ge30(A = Eu, Sr, Ba) and Sr8Ga 16Si30-xGex

Y. Takasu, T. Hasegawa, N. Ogita, M. Udagawa, K. Suekuni, M. A. Avila, T. Takabatake

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Abstract

Dynamical motions of a guest ion in type-I clathrate compounds have been studied by Raman scattering measurements. The anomalous temperature dependence of the guest phonon energy has been found not only for A8Ga 16Ge30(A=Ba, Sr, Eu), but also for A8Ga 16Si30-xGex(A = Ba, Sr). It has been found that the 4th order anharmonic potential is important to the guest ion motion. For Sr8Ga16Si30-xGex, the off-center rattling arises with the increase of Ge concentration, and it is confirmed that the off-center rattling plays an important role to the suppression of the lattice thermal conductivity.

Original languageEnglish
Article number012151
JournalJournal of Physics: Conference Series
Volume92
Issue number1
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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