Raman spectra from Ga1-xInxAs epitaxial layers grown on GaAs and InP substrates

Koichi Kakimoto, T. Katoda

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

Raman spectra from Ga1-xInxAs epitaxial layers of various compositions were studied. Both disorder-activated acoustic and optical phonons appeared in the midrange of composition independent of substrate materials. Broadening in the LO phonon due to stress was also observed near the interface region between the epitaxial layer and the substrate when there was lattice mismatch between them even if the amount was as small as 0.7%.

Original languageEnglish
Pages (from-to)826-828
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number9
DOIs
Publication statusPublished - Dec 1 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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