Raman spectra from Ga1-xInxAs epitaxial layers of various compositions were studied. Both disorder-activated acoustic and optical phonons appeared in the midrange of composition independent of substrate materials. Broadening in the LO phonon due to stress was also observed near the interface region between the epitaxial layer and the substrate when there was lattice mismatch between them even if the amount was as small as 0.7%.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)