TY - JOUR
T1 - Random anion distribution in MSxSe2-x (M = Mo, W) crystals and nanosheets
AU - Nguyen, Minh An T.
AU - Gupta, Arnab Sen
AU - Shevrin, Jacob
AU - Akamatsu, Hirofumi
AU - Xu, Pengtao
AU - Lin, Zhong
AU - Wang, Ke
AU - Zhu, Jun
AU - Gopalan, Venkatraman
AU - Terrones, Mauricio
AU - Mallouk, Thomas E.
N1 - Funding Information:
The authors thank Saul Lapidus for assistance in collecting SXRD data and David Weik and David Getchell for helpful technical coding discussions. Junjie Wang assisted in the KFPM measurements. This work was supported by the Army Research Office under MURI grant W911NF-11-1-0362. A. S. G. and V. G. were supported by the National Science Foundation under MRSEC grant DMR-1420620. H. A. was supported by JSPS KAKENHI Grant-in-Aid for Research Activity Start-up (Grant No. 16H06793). H. A. also thanks the Murata Science Foundation for their nancial support. J. S. was supported by an undergraduate research fund from Penn State. Instrumentation and facilities used in this project were supported by the Pennsylvania State University Materials Research Institute Nano-fabrication Laboratory under National Science Foundation Cooperative Agreement ECS-0335765 and Argonne National Laboratory Beamline 11-BM under proposals 45322 and 42639.
Funding Information:
This work was supported by the Army Research Office under MURI grant W911NF-11-1-0362. A. S. G. and V. G. were supported by the National Science Foundation under MRSEC grant DMR-1420620. H. A. was supported by JSPS KAKENHI Grant-in-Aid for Research Activity Start-up (Grant No. 16H06793). H. A. also thanks the Murata Science Foundation for their financial support. J. S. was supported by an undergraduate research fund from Penn State. Instrumentation and facilities used in this project were supported by the Pennsylvania State University Materials Research Institute Nanofabrication Laboratory under National Science Foundation Cooperative Agreement ECS-0335765 and Argonne National Laboratory Beamline 11-BM under proposals 45322 and 42639.
Publisher Copyright:
© 2018 The Royal Society of Chemistry.
PY - 2018
Y1 - 2018
N2 - The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2-x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2-x solid solutions.
AB - The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2-x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2-x solid solutions.
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U2 - 10.1039/c8ra01497c
DO - 10.1039/c8ra01497c
M3 - Article
AN - SCOPUS:85044068396
VL - 8
SP - 9871
EP - 9878
JO - RSC Advances
JF - RSC Advances
SN - 2046-2069
IS - 18
ER -