Abstract
The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2-x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2-x solid solutions.
| Original language | English |
|---|---|
| Pages (from-to) | 9871-9878 |
| Number of pages | 8 |
| Journal | RSC Advances |
| Volume | 8 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - Jan 1 2018 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
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Random anion distribution in MSxSe2-x (M = Mo, W) crystals and nanosheets. / Nguyen, Minh An T.; Gupta, Arnab Sen; Shevrin, Jacob; Akamatsu, Hirofumi; Xu, Pengtao; Lin, Zhong; Wang, Ke; Zhu, Jun; Gopalan, Venkatraman; Terrones, Mauricio; Mallouk, Thomas E.
In: RSC Advances, Vol. 8, No. 18, 01.01.2018, p. 9871-9878.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Random anion distribution in MSxSe2-x (M = Mo, W) crystals and nanosheets
AU - Nguyen, Minh An T.
AU - Gupta, Arnab Sen
AU - Shevrin, Jacob
AU - Akamatsu, Hirofumi
AU - Xu, Pengtao
AU - Lin, Zhong
AU - Wang, Ke
AU - Zhu, Jun
AU - Gopalan, Venkatraman
AU - Terrones, Mauricio
AU - Mallouk, Thomas E.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2-x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2-x solid solutions.
AB - The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MSxSe2-x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MSxSe2-x solid solutions.
UR - http://www.scopus.com/inward/record.url?scp=85044068396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85044068396&partnerID=8YFLogxK
U2 - 10.1039/c8ra01497c
DO - 10.1039/c8ra01497c
M3 - Article
AN - SCOPUS:85044068396
VL - 8
SP - 9871
EP - 9878
JO - RSC Advances
JF - RSC Advances
SN - 2046-2069
IS - 18
ER -